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Is extreme-ultraviolet pellicle possible? - In terms of heat absorption

Authors
Kim, In-SeonLee, Hyung-CheolKim, Eun-JinKim, Ji-WonOh, Hye-Keun
Issue Date
Mar-2012
Publisher
SPIE
Keywords
EUV lithography; Pellicle; Thermal behavior
Citation
Proceedings of SPIE - The International Society for Optical Engineering, v.8322, pp.1 - 10
Indexed
SCOPUS
Journal Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
8322
Start Page
1
End Page
10
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/36212
DOI
10.1117/12.916377
ISSN
0277-786X
Abstract
In EUVL, a pellicle is required for protecting the mask from contamination. However, the use of the pellicle at the real applications is very challenging since temperature increase due to EUV light absorption can reduce the transmission of EUV beams and distort a transmitted EUV beam profile. In the previous study, we consider the thermal behaviors of the pellicle considering only the film during EUV lithography based on a simple thermal modeling using the heat transfer equations. However the mesh is also required for supporting the thin film. Here we report the study of thermal behaviors of the pellicle including both the film and the mesh. In the previous studies done by others, there are 3 cases depending on linewidth and pitch and we review all the cases. And we take silicon as the material of thin film and wire-mesh. We will show that the temperature increase of the mesh and its dependence on the structure are much smaller than those of the film. Furthermore the conditions of a mesh structure and a material to reduce adverse thermal effects will be discussed. © 2012 SPIE.
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF APPLIED PHYSICS > 1. Journal Articles
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 1. Journal Articles

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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)
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