Efficient three-dimensional nanostructured photoelectric device by Al-ZnO coating on lithography-free patterned Si nanopillars
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jee, Sang-Won | - |
dc.contributor.author | Park, Seong-Je | - |
dc.contributor.author | Kim, Joondong | - |
dc.contributor.author | Park, Yun Chang | - |
dc.contributor.author | Choi, Jun-Hyuk | - |
dc.contributor.author | Jeong, Jun-Ho | - |
dc.contributor.author | Lee, Jung-Ho | - |
dc.date.accessioned | 2021-06-23T10:39:14Z | - |
dc.date.available | 2021-06-23T10:39:14Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2011-08 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/37254 | - |
dc.description.abstract | An efficient three-dimensional (3D) nanostructure photoelectric device is presented. An Al-doped ZnO (AZO) coating was applied to lithography-free patterned Si nanopillars and spontaneously formed a radial heterojunction (n-AZO/p-Si) photodiode having a quality ideality factor of 1.64. A significantly enhanced photocurrent of 5.45 mA/cm(2) was obtained from the 3D nanostructure relative to that of a planar substrate (1.1 mA/cm(2)). This enhancement is induced by enlargement of the light-active surface area and an anti-reflection effect. Due to the intermediate refractive index of AZO, the reflection was distinctively reduced in the air-Si system. It discusses an effective approach for realizing nanostructured photoelectric device. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3621877] | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | American Institute of Physics | - |
dc.title | Efficient three-dimensional nanostructured photoelectric device by Al-ZnO coating on lithography-free patterned Si nanopillars | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Jung-Ho | - |
dc.identifier.doi | 10.1063/1.3621877 | - |
dc.identifier.scopusid | 2-s2.0-80051600481 | - |
dc.identifier.wosid | 000293617300080 | - |
dc.identifier.bibliographicCitation | Applied Physics Letters, v.99, no.5, pp.1 - 3 | - |
dc.relation.isPartOf | Applied Physics Letters | - |
dc.citation.title | Applied Physics Letters | - |
dc.citation.volume | 99 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SILICON NANOWIRES | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordAuthor | SOLAR-CELLS | - |
dc.subject.keywordAuthor | SILICON NANOWIRES | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3621877 | - |
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