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Low-fvequwncy characteristics of GaAsMESFETs groan by vapor phas epitaxy
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오재응 | - |
| dc.date.accessioned | 2021-06-23T11:09:11Z | - |
| dc.date.available | 2021-06-23T11:09:11Z | - |
| dc.date.created | 2020-12-17 | - |
| dc.date.issued | 1993-02-01 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/38404 | - |
| dc.publisher | 포항 공과 대학 | - |
| dc.title | Low-fvequwncy characteristics of GaAsMESFETs groan by vapor phas epitaxy | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 오재응 | - |
| dc.identifier.bibliographicCitation | Seniconducton Device Workshopsfor Young Engineers | - |
| dc.relation.isPartOf | Seniconducton Device Workshopsfor Young Engineers | - |
| dc.citation.title | Seniconducton Device Workshopsfor Young Engineers | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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