AC-DC factor sensitivity for DRAM components lifetime under hot-carrier injection
DC Field | Value | Language |
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dc.contributor.author | Baeg, Sanghyeon | - |
dc.contributor.author | Nam, Haewoon | - |
dc.contributor.author | Chia, Pierre | - |
dc.contributor.author | Wen, Shijie | - |
dc.contributor.author | Wong, Richard | - |
dc.date.accessioned | 2021-06-23T12:03:19Z | - |
dc.date.available | 2021-06-23T12:03:19Z | - |
dc.date.created | 2021-01-22 | - |
dc.date.issued | 2011-04 | - |
dc.identifier.issn | 1541-7026 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39075 | - |
dc.description.abstract | Estimating operating lifetime is critical for dynamic random access memory (DRAM) components with hot-carrier injection (HCI). Using DC device lifetime to substitute a component lifetime can be too pessimistic and can disqualify good DRAM products. This work proposes the DC to AC lifetime ratio factor and its sensitivity over three parameters: device degradation, effective drain voltage in word-line driving circuit, and access frequency. The timing margin in word-line driver signal is directly related to HCI degradation and correlated to DC to AC lifetime ratio. The results are discussed with measured I sub current in three different technologies and DRAM components, and correlated with both simulation and test data. © 2011 IEEE. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE | - |
dc.title | AC-DC factor sensitivity for DRAM components lifetime under hot-carrier injection | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Baeg, Sanghyeon | - |
dc.identifier.doi | 10.1109/IRPS.2011.5784457 | - |
dc.identifier.scopusid | 2-s2.0-79959325981 | - |
dc.identifier.wosid | 000295322100015 | - |
dc.identifier.bibliographicCitation | IEEE International Reliability Physics Symposium Proceedings | - |
dc.relation.isPartOf | IEEE International Reliability Physics Symposium Proceedings | - |
dc.citation.title | IEEE International Reliability Physics Symposium Proceedings | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | AC-DC Factor | - |
dc.subject.keywordPlus | Access frequency | - |
dc.subject.keywordPlus | Device degradation | - |
dc.subject.keywordPlus | Device lifetime | - |
dc.subject.keywordPlus | Drain voltage | - |
dc.subject.keywordPlus | Driving circuits | - |
dc.subject.keywordPlus | Dynamic random access memory | - |
dc.subject.keywordPlus | Hot carrier injection | - |
dc.subject.keywordPlus | Lifetime ratio | - |
dc.subject.keywordPlus | Operating lifetime | - |
dc.subject.keywordPlus | pumped voltage | - |
dc.subject.keywordPlus | Test data | - |
dc.subject.keywordPlus | Three parameters | - |
dc.subject.keywordPlus | Timing margin | - |
dc.subject.keywordPlus | Degradation | - |
dc.subject.keywordPlus | Dynamic random access storage | - |
dc.subject.keywordPlus | Hot carriers | - |
dc.subject.keywordPlus | Integrated circuits | - |
dc.subject.keywordPlus | Electric currents | - |
dc.subject.keywordAuthor | AC-DC Factor | - |
dc.subject.keywordAuthor | DRAM | - |
dc.subject.keywordAuthor | hot-carrier injection | - |
dc.subject.keywordAuthor | pumped voltage | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/5784457 | - |
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