A strong antireflective solar cell prepared by tapering silicon nanowires
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Jin-Young | - |
dc.contributor.author | Guo, Zhongyi | - |
dc.contributor.author | Jee, Sang-Won | - |
dc.contributor.author | Um, Han-Don | - |
dc.contributor.author | Park, Kwang-Tae | - |
dc.contributor.author | Lee, Jung-Ho | - |
dc.date.accessioned | 2021-06-23T12:41:30Z | - |
dc.date.available | 2021-06-23T12:41:30Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2010-09 | - |
dc.identifier.issn | 1094-4087 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39553 | - |
dc.description.abstract | Vertically aligned silicon nanowires (SiNWs) were cost-effectively formed on a four-inch silicon wafer using a simple room temperature approach, i.e., metal-assisted electroless etching. Tapering the NWs by post-KOH dipping achieved separation of each NW from the bunched NW, resulting in a strong enhancement of broadband optical absorption. As electroless etching time increases, the optical crossover feature was observed in the tradeoff between enhanced light trapping (by graded-refractive index during initial tapering) and deteriorated reflectance (by decreasing the areal density of NWs during later tapering). Compared to the bunched SiNWs, tapered NW solar cells demonstrated superior photovoltaic characteristics, such as a short circuit current of 17.67 mA/cm(2) and a cell conversion efficiency of similar to 6.56% under 1.5 AM illumination. (C) 2010 Optical Society of America | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Optical Society of America | - |
dc.title | A strong antireflective solar cell prepared by tapering silicon nanowires | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Jung-Ho | - |
dc.identifier.doi | 10.1364/OE.18.00A286 | - |
dc.identifier.scopusid | 2-s2.0-77956985410 | - |
dc.identifier.wosid | 000281779600067 | - |
dc.identifier.bibliographicCitation | Optics Express, v.18, no.S3, pp.A286 - A292 | - |
dc.relation.isPartOf | Optics Express | - |
dc.citation.title | Optics Express | - |
dc.citation.volume | 18 | - |
dc.citation.number | S3 | - |
dc.citation.startPage | A286 | - |
dc.citation.endPage | A292 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.subject.keywordPlus | OPTICAL-ABSORPTION ENHANCEMENT | - |
dc.subject.keywordPlus | PHOTOVOLTAIC APPLICATIONS | - |
dc.subject.keywordPlus | BROAD-BAND | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | GRATINGS | - |
dc.subject.keywordAuthor | GRATINGS | - |
dc.subject.keywordAuthor | OPTICAL-ABSORPTION ENHANCEMENT | - |
dc.subject.keywordAuthor | PHOTOVOLTAIC APPLICATIONS | - |
dc.subject.keywordAuthor | ARRAYS | - |
dc.subject.keywordAuthor | BROAD-BAND | - |
dc.identifier.url | https://www.osapublishing.org/oe/fulltext.cfm?uri=oe-18-S3-A286&id=202943 | - |
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