Mechanism of Embedded Micro/Nano Channel Formation for a Negative-tone Photoresist by Moving Mask Lithography
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sang-Kon | - |
dc.contributor.author | Oh, Hye-Keun | - |
dc.contributor.author | Jung, Young-Dae | - |
dc.contributor.author | An, Ilsin | - |
dc.date.accessioned | 2021-06-23T13:38:06Z | - |
dc.date.available | 2021-06-23T13:38:06Z | - |
dc.date.issued | 2010-03 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.issn | 1976-8524 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39948 | - |
dc.description.abstract | Photoresist lithography has been applied in MEMS (micro electro mechanical systems). A flexible 3D (three-dimensional) micro/nano fabrication technique and its process simulation tool are required for 3D MEMS. This paper presents an UV (ultraviolet) lithography process simulation for the formation of an embedded micro/nano fluidic channel in a negative-tone photoresist. For this purpose, the moving-mask technology is modeled. The simulation algorithm of the nanolithography is applied for the micro-lithography. The validity of the simulation for the proposed 3D microstructuring is successfully confirmed by a, comparison between the experimental and the simulated results. Hence, modeling and simulation for the formation of various patterns of micro/nano fluidic channels in a negative-tone photoresist can be used to provide the photoresist characteristics and to optimize the lithography process conditions. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Mechanism of Embedded Micro/Nano Channel Formation for a Negative-tone Photoresist by Moving Mask Lithography | - |
dc.type | Article | - |
dc.publisher.location | 대한민국 | - |
dc.identifier.doi | 10.3938/jkps.56.851 | - |
dc.identifier.scopusid | 2-s2.0-77954856222 | - |
dc.identifier.wosid | 000275624200030 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.56, no.3, pp 851 - 855 | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 56 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 851 | - |
dc.citation.endPage | 855 | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001429009 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | CHEMICALLY AMPLIFIED RESIST | - |
dc.subject.keywordPlus | SIMULATION | - |
dc.subject.keywordAuthor | Lithography | - |
dc.subject.keywordAuthor | Lithography simulation | - |
dc.subject.keywordAuthor | Negative resist | - |
dc.subject.keywordAuthor | Chemically amplified resist | - |
dc.subject.keywordAuthor | Multi-exposures | - |
dc.subject.keywordAuthor | Inverse lithography | - |
dc.subject.keywordAuthor | Embedded fluidic channels | - |
dc.subject.keywordAuthor | MEMS | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?volume=56&number=3&spage=851&year=2010 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.