Bipolar Resistive Switching Characteristics of Cu/TaOx/Pt Structures
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cha, Dongjae | - |
dc.contributor.author | Lee, Sungjoo | - |
dc.contributor.author | Jung, J. | - |
dc.contributor.author | An, Ilsin | - |
dc.contributor.author | Kim, Dong Wook | - |
dc.date.accessioned | 2021-06-23T13:38:08Z | - |
dc.date.available | 2021-06-23T13:38:08Z | - |
dc.date.issued | 2010-03 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.issn | 1976-8524 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/39949 | - |
dc.description.abstract | We investigated the electrical properties of Cu/TaOx/Pt structures, which were prepared by RF-sputtering at room temperature. Spectroscopic ellipsometry (SE) measurements revealed that the refractive indices of the TaOx thin films decreased with increasing oxygen-to-argon gas ratio during the growth. The transport; analyses based on the Poole-Frenkel emission model yielded the dielectric constant of the TaOx layers; the results were consistent with the SE results. The Cu/TaOx/Pt structures exhibited bipolar resistive switching (RS), and less-oxidized samples showed a more reliable RS behavior than more-oxidized ones. The high-to-low resistance ratio was nearly 10(3), and the switching voltage was less than 1 V. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | 한국물리학회 | - |
dc.title | Bipolar Resistive Switching Characteristics of Cu/TaOx/Pt Structures | - |
dc.type | Article | - |
dc.publisher.location | 대한민국 | - |
dc.identifier.doi | 10.3938/jkps.56.846 | - |
dc.identifier.scopusid | 2-s2.0-77954837076 | - |
dc.identifier.wosid | 000275624200029 | - |
dc.identifier.bibliographicCitation | Journal of the Korean Physical Society, v.56, no.3, pp 846 - 850 | - |
dc.citation.title | Journal of the Korean Physical Society | - |
dc.citation.volume | 56 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 846 | - |
dc.citation.endPage | 850 | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001428969 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | MEMORIES | - |
dc.subject.keywordAuthor | Ionic memory switching | - |
dc.subject.keywordAuthor | Tantalum oxide | - |
dc.subject.keywordAuthor | Sputtering | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?volume=56&number=3&spage=846&year=2010 | - |
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