Bi and Te thin films synthesized by galvanic displacement from acidic nitric baths
DC Field | Value | Language |
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dc.contributor.author | Chang, Chong Hyun | - |
dc.contributor.author | Rheem, Youngwoo | - |
dc.contributor.author | Choa, Yong-Ho | - |
dc.contributor.author | Shin, Dong Hyuk | - |
dc.contributor.author | Park, Deok-Yong | - |
dc.contributor.author | Myung, Nosang V. | - |
dc.date.accessioned | 2021-06-23T13:39:59Z | - |
dc.date.available | 2021-06-23T13:39:59Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2010-01 | - |
dc.identifier.issn | 0013-4686 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/40035 | - |
dc.description.abstract | Bismuth (Bi) and tellurium (Te) thin films were formed by galvanic displacement of different sacrificial iron group thin films [i.e. nickel (Ni), cobalt (Co) and iron (Fe)] where the formation was systematically investigated by monitoring the change of open circuit potential (OCP), surface morphology and microstructure. The surface morphologies and crystal structures of galvanically displaced Bi or Te thin films strongly depended on the type and thickness of the sacrificial materials. Continuous Bi thin films were successfully deposited with the sacrificial Co. However, dendrites and nanoplatelets were formed from the Ni and Fe thin films. Te thin films were synthesized with all the three sacrificial thin films. Chemical dissolution rate of the sacrificial thin films and mixed potential strongly influenced formation of Bi or Te thin films. (C) 2009 Elsevier Ltd. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Bi and Te thin films synthesized by galvanic displacement from acidic nitric baths | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choa, Yong-Ho | - |
dc.identifier.doi | 10.1016/j.electacta.2009.09.038 | - |
dc.identifier.scopusid | 2-s2.0-70549113155 | - |
dc.identifier.wosid | 000274020200021 | - |
dc.identifier.bibliographicCitation | ELECTROCHIMICA ACTA, v.55, no.3, pp.743 - 752 | - |
dc.relation.isPartOf | ELECTROCHIMICA ACTA | - |
dc.citation.title | ELECTROCHIMICA ACTA | - |
dc.citation.volume | 55 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 743 | - |
dc.citation.endPage | 752 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.subject.keywordPlus | AQUEOUS ALKALINE-SOLUTION | - |
dc.subject.keywordPlus | BISMUTH NANOTUBE ARRAYS | - |
dc.subject.keywordPlus | LARGE-SCALE SYNTHESIS | - |
dc.subject.keywordPlus | ONE-STEP APPROACH | - |
dc.subject.keywordPlus | ELECTROLESS DEPOSITION | - |
dc.subject.keywordPlus | METAL NANOSTRUCTURES | - |
dc.subject.keywordPlus | REPLACEMENT REACTION | - |
dc.subject.keywordPlus | TELLURIUM NANOWIRES | - |
dc.subject.keywordPlus | SI(100) SURFACES | - |
dc.subject.keywordPlus | HOLLOW INTERIORS | - |
dc.subject.keywordAuthor | Galvanic displacement | - |
dc.subject.keywordAuthor | Electroless deposition | - |
dc.subject.keywordAuthor | Bismuth | - |
dc.subject.keywordAuthor | Tellurium | - |
dc.subject.keywordAuthor | Thermoelectric materials | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0013468609011979?via%3Dihub | - |
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