Cost-efficient fabrication of UV/Vis nanowire (NW) photodiodes enabled by ZnO/Si radial heterojunction
DC Field | Value | Language |
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dc.contributor.author | Um, Han Don | - |
dc.contributor.author | Park, Kwang Tae | - |
dc.contributor.author | Jung, Jin Young | - |
dc.contributor.author | Jee, Sang Won | - |
dc.contributor.author | Moiz, Syed Abdul | - |
dc.contributor.author | Ahn, Cheol Hyoun | - |
dc.contributor.author | Cho, Hyung Koun | - |
dc.contributor.author | Lee, Eunsonyi | - |
dc.contributor.author | Kim, Dong Wook | - |
dc.contributor.author | Park, Yun Chang | - |
dc.contributor.author | Yang, Jun Mo | - |
dc.contributor.author | Lim, Sung Kyu | - |
dc.contributor.author | Lee, Jung Ho | - |
dc.date.accessioned | 2021-06-23T14:07:15Z | - |
dc.date.available | 2021-06-23T14:07:15Z | - |
dc.date.created | 2021-01-22 | - |
dc.date.issued | 2010 | - |
dc.identifier.issn | 0163-1918 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/40471 | - |
dc.description.abstract | Radial heterojunction nanowires (NWs) using a ZnO(shell)/Si(core) coaxial structure are for the first time reported for a novel photodiode application. Strong antireflective characteristics are shown by employing vertically aligned Si NW arrays. A thin ZnO shell deposited onto a Si NW formed a radial junction which enabled effective separation of charge carriers. Furthermore, a ZnO nanostructure demonstrates a very high internal gain in photoconductivity due to the surface-enhanced electron-hole separation. The photodetection range, either ultraviolet (UV) or visible, can be determined by applying forward or reverse bias, respectively. Compared to a planar heterojunction photodiode, a photoresponsivity of the radial heterojunction structure shows similar values despite only ∼20% consumption of a ZnO thickness required for a planar junction. In addition, ∼2.5 times increase in UV responsivity is also presented using the radial heterojunction structure under the ZnO thickness same as a planar counterpart. Our coaxial ZnO/Si NW photodetectors suggest bright prospect for enhancing a photoresponsivity while less consuming ZnO via controlling the wired nanostructure. ©2010 IEEE. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE | - |
dc.title | Cost-efficient fabrication of UV/Vis nanowire (NW) photodiodes enabled by ZnO/Si radial heterojunction | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Jung Ho | - |
dc.identifier.doi | 10.1109/IEDM.2010.5703330 | - |
dc.identifier.scopusid | 2-s2.0-79951843159 | - |
dc.identifier.bibliographicCitation | Technical Digest - International Electron Devices Meeting, IEDM, pp.9.5.1 - 9.5.4 | - |
dc.relation.isPartOf | Technical Digest - International Electron Devices Meeting, IEDM | - |
dc.citation.title | Technical Digest - International Electron Devices Meeting, IEDM | - |
dc.citation.startPage | 9.5.1 | - |
dc.citation.endPage | 9.5.4 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Antireflective characteristics | - |
dc.subject.keywordPlus | Coaxial structures | - |
dc.subject.keywordPlus | Cost-efficient | - |
dc.subject.keywordPlus | Electron-hole separation | - |
dc.subject.keywordPlus | Heterojunction photodiodes | - |
dc.subject.keywordPlus | Heterojunction structures | - |
dc.subject.keywordPlus | Photo detection | - |
dc.subject.keywordPlus | Photoresponsivity | - |
dc.subject.keywordPlus | Planar junctions | - |
dc.subject.keywordPlus | Responsivity | - |
dc.subject.keywordPlus | Reverse bias | - |
dc.subject.keywordPlus | Ultra-violet | - |
dc.subject.keywordPlus | Vertically aligned | - |
dc.subject.keywordPlus | ZnO | - |
dc.subject.keywordPlus | ZnO nanostructures | - |
dc.subject.keywordPlus | ZnO shells | - |
dc.subject.keywordPlus | Electron devices | - |
dc.subject.keywordPlus | Heterojunctions | - |
dc.subject.keywordPlus | Nanowires | - |
dc.subject.keywordPlus | Optoelectronic devices | - |
dc.subject.keywordPlus | Photodetectors | - |
dc.subject.keywordPlus | Photodiodes | - |
dc.subject.keywordPlus | Silicon | - |
dc.subject.keywordPlus | Zinc oxide | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/5703330 | - |
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