Line Edge Roughness Reduction Using Resist Reflow Process for 22 nm Node Extreme Ultraviolet Lithography
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, In Wook | - |
dc.contributor.author | Kim, Hyunsu | - |
dc.contributor.author | You, Jee-Hye | - |
dc.contributor.author | Oh, Hye-Keun | - |
dc.date.accessioned | 2021-06-23T14:38:46Z | - |
dc.date.available | 2021-06-23T14:38:46Z | - |
dc.date.issued | 2010-03 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.issn | 1347-4065 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/40564 | - |
dc.description.abstract | Extreme ultraviolet lithography (EUVL) has been developed and studied for a sub-22 nm semiconductor device. It is difficult to obtain a smooth sub-22 nm pattern because line edge roughness (LER) and linewidth roughness (LWR) cannot be controlled well. According to the 2008 ITRS roadmap, LER has to be below 1.3 nm to achieve a 22 nm node for EUVL. In our previous work, the resist reflow process (RRP), in which the resist is baked above the glass transition temperature (T-g), was very helpful for reducing LER and LWR for EUVL. LER and LWR could be decreased from similar to 6 to similar to 1 nm. As RRP time progresses, however, the critical dimension could become wider because the developed resist can flow more easily when the temperature is above T-g. Therefore, another method is suggested to solve this problem. The developed resist, which is intentionally designed with a 1 : 3 line and space (L/S) (11 : 33 nm) pattern, is baked above T-g. As a result, LER and LWR can be smoothed by RRP and we could achieve a 22 nm 1 : 1 L/S pattern with a small LER. (C) 2010 The Japan Society of Applied Physics | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IOP Publishing Ltd | - |
dc.title | Line Edge Roughness Reduction Using Resist Reflow Process for 22 nm Node Extreme Ultraviolet Lithography | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1143/JJAP.49.036502 | - |
dc.identifier.scopusid | 2-s2.0-77954023000 | - |
dc.identifier.wosid | 000276386100059 | - |
dc.identifier.bibliographicCitation | Japanese Journal of Applied Physics, v.49, no.3, pp 1 - 5 | - |
dc.citation.title | Japanese Journal of Applied Physics | - |
dc.citation.volume | 49 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THERMAL REFLOW | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.49.036502 | - |
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