n-ZnO:Ga/i-ZnO/p-Si heterojunction light emitting diodes fabricated on patterned Si substrates
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Mi Kyung | - |
dc.contributor.author | Han, Won Suk | - |
dc.contributor.author | Kim, Young Yi | - |
dc.contributor.author | Kong, Bo Hyun | - |
dc.contributor.author | Cho, Hyung Koun | - |
dc.contributor.author | Kim, Jae Hyun | - |
dc.contributor.author | Seo, Hong-Seok | - |
dc.contributor.author | Kim, Kang-Pil | - |
dc.contributor.author | Lee, Jung-Ho | - |
dc.date.accessioned | 2021-06-23T14:40:14Z | - |
dc.date.available | 2021-06-23T14:40:14Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2009-12 | - |
dc.identifier.issn | 0957-4522 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/40632 | - |
dc.description.abstract | n-ZnO:Ga/i-ZnO/p-Si heterojunction light-emitting diodes were fabricated on patterned Si substrates with increased interface area where hole carriers were transported to the i-ZnO layer. The patterned Si substrates were prepared by electrochemical etching, and the n-type ZnO:Ga films were deposited by high-temperature sputtering. In the patterned LED, the lower breakdown and greater leakage current under a reverse bias was attributed to the formation of a high density of grain boundaries and random tilting of the c-axis. Compared to an LED without patterning, the patterned substrates resulted in approximately 75% improvement in the output power of visible emission, which was attributed to a 1.33-fold increase in the heterojunction area and the increase in grain boundary density due to grain tilting. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Kluwer Academic Publishers | - |
dc.title | n-ZnO:Ga/i-ZnO/p-Si heterojunction light emitting diodes fabricated on patterned Si substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Jung-Ho | - |
dc.identifier.doi | 10.1007/s10854-009-9854-y | - |
dc.identifier.scopusid | 2-s2.0-70350345446 | - |
dc.identifier.wosid | 000270780500011 | - |
dc.identifier.bibliographicCitation | Journal of Materials Science: Materials in Electronics, v.20, no.12, pp.1214 - 1218 | - |
dc.relation.isPartOf | Journal of Materials Science: Materials in Electronics | - |
dc.citation.title | Journal of Materials Science: Materials in Electronics | - |
dc.citation.volume | 20 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 1214 | - |
dc.citation.endPage | 1218 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | EPITAXY | - |
dc.subject.keywordAuthor | EPITAXY | - |
dc.subject.keywordAuthor | TEMPERATURE | - |
dc.identifier.url | https://link.springer.com/article/10.1007%2Fs10854-009-9854-y | - |
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