Strong photoluminescence at 1.53 mu m from GaSb/AlGaSb multiple quantum wells grown on Si substrate
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Nguyen, D. H. | - |
dc.contributor.author | Park, J. | - |
dc.contributor.author | Noh, Y. K. | - |
dc.contributor.author | Kim, M. D. | - |
dc.contributor.author | Lee, D. | - |
dc.contributor.author | Oh, J. E. | - |
dc.date.accessioned | 2021-06-23T15:05:26Z | - |
dc.date.available | 2021-06-23T15:05:26Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2009-08 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/40967 | - |
dc.description.abstract | Strong photoluminescence at 1.53 mu m was obtained from a GaSb/Al0.4Ga0.6Sb multiple-quantum-well sample grown on Si substrate, indicating greatly reduced defects by InSb quantum-dot layers that terminate dislocations. The carrier lifetime of 1.4 ns, comparable to typical InP-based quantum wells, and its independence on excitation power indicates the low defect density. Due to the wide well width and tensile strain, photoluminescence was dominated by the light hole-electron transition at low temperature. However, the heavy hole-electron transition was dominant at room temperature due to the proximity of energy levels and higher density of states for the heavy hole transition. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Strong photoluminescence at 1.53 mu m from GaSb/AlGaSb multiple quantum wells grown on Si substrate | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Oh, J. E. | - |
dc.identifier.doi | 10.1063/1.3205473 | - |
dc.identifier.scopusid | 2-s2.0-69049111038 | - |
dc.identifier.wosid | 000269060600019 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.95, no.6 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 95 | - |
dc.citation.number | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | GASB | - |
dc.subject.keywordPlus | TRANSITIONS | - |
dc.subject.keywordPlus | LASERS | - |
dc.subject.keywordAuthor | aluminium compounds | - |
dc.subject.keywordAuthor | carrier lifetime | - |
dc.subject.keywordAuthor | dislocations | - |
dc.subject.keywordAuthor | electronic density of states | - |
dc.subject.keywordAuthor | gallium compounds | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | photoluminescence | - |
dc.subject.keywordAuthor | semiconductor quantum dots | - |
dc.subject.keywordAuthor | semiconductor quantum wells | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.3205473 | - |
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