Three-dimensional Macropore Arrays in p-type Silicon Fabricated by Electrochemical Etching
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jae Hyun | - |
dc.contributor.author | Kim, Kang-Pil | - |
dc.contributor.author | Lyu, Hong-Kun | - |
dc.contributor.author | Woo, Sung-Ho | - |
dc.contributor.author | Seo, Hong-Seok | - |
dc.contributor.author | Lee, Jung-Ho | - |
dc.date.accessioned | 2021-06-23T15:07:06Z | - |
dc.date.available | 2021-06-23T15:07:06Z | - |
dc.date.created | 2021-02-01 | - |
dc.date.issued | 2009-07 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/41056 | - |
dc.description.abstract | Ordered macropores formed in p-type silicon substrates (1.0 similar to 20 Omega.cm) by using electrochemical anodization in various HF-containing electrolytes was investigated under different operating conditions. The effect of electrolyte composition and etch pits or) controlling the formation of macropores on periodically arranged pores is reported. The results revealed that the natures of the constituents of the Solution play very important roles in determining pore formation and morphology and that stable ordered macropore growth is not possible without an inverse pyramid notch. By using a Si/SiGe/Si/SiGe/p-type silicon structure, we were able to fabricate ordered pillar structures without an etch pit formation process. A possible role of two sets of Si/SiGe layers in pillar formation is proposed. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | 한국물리학회 | - |
dc.title | Three-dimensional Macropore Arrays in p-type Silicon Fabricated by Electrochemical Etching | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Jung-Ho | - |
dc.identifier.scopusid | 2-s2.0-69249200569 | - |
dc.identifier.wosid | 000268023600002 | - |
dc.identifier.bibliographicCitation | Journal of the Korean Physical Society, v.55, no.1, pp.5 - 9 | - |
dc.relation.isPartOf | Journal of the Korean Physical Society | - |
dc.citation.title | Journal of the Korean Physical Society | - |
dc.citation.volume | 55 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 5 | - |
dc.citation.endPage | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001498050 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | PHYSICS | - |
dc.subject.keywordAuthor | Macropore | - |
dc.subject.keywordAuthor | p-type silicon | - |
dc.subject.keywordAuthor | Electrochemical etching | - |
dc.identifier.url | https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART001498050 | - |
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