Growth Mode Analysis of InN Grown on an AlN Buffer by Using Molecular Beam Epitaxy

Abstract

The nucleation and the surface morphology of thin InN layers grown by using molecular beam epitaxy on AlN/Si(III) substrates were investigated using reflection high-energy electron diffraction (RHEED), atomic force microscopy, and scanning electronics microscopy. The RHEED intensity, the thickness of the InN wetting layer, and the lattice constant of the InN initial growth stage were found to be more dependent on the indium quantity. Though growth at a high indium quantity and a high growth temperature would be expected to follow the Volmer-Weber growth mode in the early growth stages, in a nitrogen-rich atmosphere at high growth temperature, the InN initial layer is grown in a Stranski-Krastanov mode. These results provide important information about the process of InN nucleation on Si substrates.