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고전압 발생을 위한 스택 구조의 DC-DC boost 변환기
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김영재 | - |
| dc.contributor.author | 남현석 | - |
| dc.contributor.author | 안영국 | - |
| dc.contributor.author | 노정진 | - |
| dc.date.accessioned | 2021-06-23T17:38:52Z | - |
| dc.date.available | 2021-06-23T17:38:52Z | - |
| dc.date.issued | 2008-06 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/42416 | - |
| dc.description.abstract | In this paper, high voltage DC- DC boost converters by stacked structure of power transistors are proposed. These stacked power transistors are tolerant to output voltage higher than the process limit for individual CMOS transistors. The proposed circuits were designed in a standard 3.6V, 0.13㎛. | - |
| dc.format.extent | 2 | - |
| dc.language | 한국어 | - |
| dc.language.iso | KOR | - |
| dc.publisher | 대한전자공학회 | - |
| dc.title | 고전압 발생을 위한 스택 구조의 DC-DC boost 변환기 | - |
| dc.title.alternative | High voltage DC - DC boost converter by stacked structure | - |
| dc.type | Article | - |
| dc.publisher.location | 대한민국 | - |
| dc.identifier.bibliographicCitation | 2008년도 대한전자공학회 하계종합학술대회 논문집, v.31, no.1, pp 476 - 477 | - |
| dc.citation.title | 2008년도 대한전자공학회 하계종합학술대회 논문집 | - |
| dc.citation.volume | 31 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 476 | - |
| dc.citation.endPage | 477 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | other | - |
| dc.identifier.url | https://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE01017105 | - |
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Related Researcher
- Roh, Jeong jin
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)