Hole mobility characteristics under electrical stress for surface-channel germanium transistors with high-k gate stack
DC Field | Value | Language |
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dc.contributor.author | Yi, Jeong-Hyong | - |
dc.contributor.author | Oh, Saeroonter | - |
dc.contributor.author | Wong, H. -S. Philip | - |
dc.date.accessioned | 2021-06-23T17:41:53Z | - |
dc.date.available | 2021-06-23T17:41:53Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2008-04 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/42584 | - |
dc.description.abstract | This paper describes device degradation and mobility characteristics for germanium (Ge)-channel p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) with HfO(2) gate dielectrics. In order to understand the effect of trapped charges in high permittivity (high-kappa) gate dielectric and interface-trap states, we compare the hole mobility of the SiGe/SiO(2)/Si (SGOI) structure before and after applying an electrical stress. It is found that hot-carrier injection (HCI) and constant-voltage Fowler-Nordheim (F-N) stress cause mobility degradation in different mechanism. Even a negative-biased moderate F-N stress will give recovery of hole mobility. These results indicate that the device performance of a surface-channel SGOI device is easily affected by the specific trapped-charge state in high-kappa dielectrics and interface traps. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | JAPAN SOCIETY APPLIED PHYSICS | - |
dc.title | Hole mobility characteristics under electrical stress for surface-channel germanium transistors with high-k gate stack | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Oh, Saeroonter | - |
dc.identifier.doi | 10.1143/JJAP.47.2544 | - |
dc.identifier.scopusid | 2-s2.0-54249159657 | - |
dc.identifier.wosid | 000255449100044 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.4, pp.2544 - 2547 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 47 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 2544 | - |
dc.citation.endPage | 2547 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | PMOSFETS | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | DEGRADATION | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | PARAMETERS | - |
dc.subject.keywordAuthor | germanium | - |
dc.subject.keywordAuthor | pMOSFET | - |
dc.subject.keywordAuthor | high-kappa | - |
dc.subject.keywordAuthor | mobility | - |
dc.subject.keywordAuthor | degradation | - |
dc.subject.keywordAuthor | hot carrier injection | - |
dc.subject.keywordAuthor | Fowler-Nordheim (F-N) stress | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.47.2544 | - |
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