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High-resolution transmission electron microscopy study on the growth modes of GaSb islands grown on a semi-insulating GaAs (001) substrate
- Authors
- Kim, Y. H.; Lee, J. Y.; Noh, Y. G.; Kim, M. D.; Oh, J. E.
- Issue Date
- Jun-2007
- Publisher
- AMER INST PHYSICS
- Keywords
- GASB/GAAS QUANTUM DOTS; STRAIN; SEMICONDUCTORS; RELAXATION; DEFECTS; EPITAXY; MISFIT
- Citation
- APPLIED PHYSICS LETTERS, v.90, no.24
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 90
- Number
- 24
- ISSN
- 0003-6951
1077-3118
- Abstract
- The initial growth behaviors of GaSb on a GaAs substrate were studied using a high-resolution electron microscope (HRTEM). Four types of GaSb islands were observed by HRTEM. HRTEM micrographs showed that strain relaxation mechanisms were different in the four types of islands. Although 90 degrees misfit dislocations relieve misfit strain in the islands, additional mechanisms are required to relax the remaining strain. The existence of elastic deformation near the surface related to dislocations and intermediate layers between GaSb and GaAs were demonstrated in island growths. Finally, the generation of planar defects to relieve strain was observed in a specific GaSb growth. (c) 2007 American Institute of Physics.
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