AlSb/InAs/AlSb 양자우물 구조에서 InSb-like 계면의 전기적 특성

Abstract

We researched the electrical and the structural properties of the InSb-like top and bottom interfaces of an InAs layer in an AlSb/InAs/AlSb quantum-well structure grown on a GaAs (001) substrate by using molecular beam epitaxy. We investigated these properties by using reflection high-energy electron diffraction, transmission election microscopy, and Hall effect measurements. We obtained an electron mobility of 20,700 cm$^2$/V$\cdot$s at room temperature by using a combination of a 30-nm InAs well and InSb-like top and bottom interfaces. In addition, according to the measurement of the temperature dependence, the InAs well interface formed an InSb-like layer.