Characteristics and prevention of pattern collapse in EUV lithography
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, Wook | - |
dc.contributor.author | Kim, Eun-Jin | - |
dc.contributor.author | Kang, Young-Min | - |
dc.contributor.author | Park, Seung-Wook | - |
dc.contributor.author | Lim, Chang-Moon | - |
dc.contributor.author | Won, Ki-Tak | - |
dc.contributor.author | Kim, Jai-Soon | - |
dc.contributor.author | Oh, Hye-Keun | - |
dc.date.accessioned | 2021-06-23T20:43:54Z | - |
dc.date.available | 2021-06-23T20:43:54Z | - |
dc.date.issued | 2007-03 | - |
dc.identifier.issn | 0277-786X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/44359 | - |
dc.description.abstract | Pattern collapse for line widths under 32 nm printed by extreme ultra-violet lithography (EUVL) is investigated by using commercial tools. Pattern collapse phenomenon occurs very often in actual process. Pattern collapse means that pattern is bending, peel-off, and break of the resist, thus it affects the production and yield of semiconductor. In this paper, we newly defined and investigated the critical aspect ratio. Pattern collapse happens if the critical aspect ratio is smaller than aspect ratio. Because EUV resist has smaller adhesive strength than currently available DUV and ArF resists, EUV resist easily collapse more easily than DUV resist does. This phenomenon is successfully modeled. | - |
dc.format.extent | 7 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.title | Characteristics and prevention of pattern collapse in EUV lithography | - |
dc.type | Article | - |
dc.identifier.doi | 10.1117/12.712469 | - |
dc.identifier.scopusid | 2-s2.0-35148857615 | - |
dc.identifier.wosid | 000246685900085 | - |
dc.identifier.bibliographicCitation | Proceedings of SPIE - The International Society for Optical Engineering, v.6517, no.PART 2, pp 1 - 7 | - |
dc.citation.title | Proceedings of SPIE - The International Society for Optical Engineering | - |
dc.citation.volume | 6517 | - |
dc.citation.number | PART 2 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 7 | - |
dc.type.docType | Conference Paper | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Imaging Science & Photographic Technology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Imaging Science & Photographic Technology | - |
dc.subject.keywordPlus | Adhesion | - |
dc.subject.keywordPlus | Aspect ratio | - |
dc.subject.keywordPlus | Bond strength (materials) | - |
dc.subject.keywordPlus | Elastic moduli | - |
dc.subject.keywordPlus | Semiconductor device manufacture | - |
dc.subject.keywordPlus | Deformation length | - |
dc.subject.keywordPlus | EUV resists | - |
dc.subject.keywordPlus | Resist pattern collapse | - |
dc.subject.keywordPlus | Extreme ultraviolet lithography | - |
dc.subject.keywordAuthor | Adhesion | - |
dc.subject.keywordAuthor | Deformation length | - |
dc.subject.keywordAuthor | Lithography | - |
dc.subject.keywordAuthor | Resist pattern collapse | - |
dc.subject.keywordAuthor | Young's modulus | - |
dc.identifier.url | https://www.spiedigitallibrary.org/conference-proceedings-of-spie/6517/1/Characteristics-and-prevention-of-pattern-collapse-in-EUV-lithography/10.1117/12.712469.short | - |
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