웨이퍼 본딩을 이용한 탐침형 정보 저장장치용 압전 켄틸레버 어레이

Abstract

In this research, a wafer-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data stroage. The transferred cantilevers were silicon nitride cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric Si3N4 cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric Si3N4 cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo- piezoelectric Si3N4 cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5 nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric SI3N4 cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.