Wafer-level transfer of thermo-piezoelectric Si3N4 cantilever array on a CMOS circuit for high density probe-based data storage
DC Field | Value | Language |
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dc.contributor.author | Kim, 1 Young-Sik | - |
dc.contributor.author | Nam,Hyo-Jin | - |
dc.contributor.author | Jang, SeongSoo | - |
dc.contributor.author | Lee, Caroline Sunyong | - |
dc.contributor.author | Jin, Won-Hyeog | - |
dc.contributor.author | Cho, 1 Il-Joo | - |
dc.contributor.author | Bu,Jong-Uk | - |
dc.contributor.author | Chang,Sun-Il | - |
dc.contributor.author | Yoon, Euisik | - |
dc.date.accessioned | 2021-06-23T22:39:59Z | - |
dc.date.available | 2021-06-23T22:39:59Z | - |
dc.date.issued | 2006-01 | - |
dc.identifier.issn | 1084-6999 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/45396 | - |
dc.description.abstract | In this research, a wafer-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride (Si3N 4) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric SisN4 cantilevers. The thermo-piezoelectric Si3N4 cantilever arrays were fabricated with a conventional p-type silicon wafer instead of a SOI wafer. Furthermore, we have developed a wafer-level cantilever transfer process, which requires only one step of cantilever transfer process to integrate the CMOS circuit with the cantilevers. Using this process, we have fabricated a single thermo-piezoelectric Si3N4 cantilever, and recorded 65nm data bits on a PMMA film. And we have successfully applied this method to transfer 34×34 thermo-piezoelectric Si3N4 cantilever arrays on a CMOS wafer. Finally, We obtained reading signals from one of the cantilevers. © 2006 IEEE. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.title | Wafer-level transfer of thermo-piezoelectric Si3N4 cantilever array on a CMOS circuit for high density probe-based data storage | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/MEMSYS.2006.1627951 | - |
dc.identifier.scopusid | 2-s2.0-33750129329 | - |
dc.identifier.wosid | 000236994500231 | - |
dc.identifier.bibliographicCitation | Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), v.2006, pp 922 - 925 | - |
dc.citation.title | Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) | - |
dc.citation.volume | 2006 | - |
dc.citation.startPage | 922 | - |
dc.citation.endPage | 925 | - |
dc.type.docType | Conference Paper | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | CMOS integrated circuits | - |
dc.subject.keywordPlus | Data storage equipment | - |
dc.subject.keywordPlus | Silicon nitride | - |
dc.subject.keywordPlus | Silicon wafers | - |
dc.subject.keywordPlus | Cantilever arrays | - |
dc.subject.keywordPlus | Piezoelectric sensors | - |
dc.subject.keywordPlus | Wafer-level cantilever transfer | - |
dc.subject.keywordPlus | Piezoelectric devices | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/1627951 | - |
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