Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Thickness effects of Al0.5Ga0.5N barriers on the optical properties of delta-AlGaN-inserted GaN-coupled multiquantum wells

Authors
Park, YSPark, CMLee, SJKang, TWLee, SHOh, Jae-Eung
Issue Date
Apr-2005
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.97, no.7
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF APPLIED PHYSICS
Volume
97
Number
7
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46013
DOI
10.1063/1.1865314
ISSN
0021-8979
Abstract
Coupled multiquantum well structures, GaN(10 angstrom)/AlGaN(5 angstrom)/GaN(20 angstrom) bounded by Al0.5Ga0.5N barriers whose thickness varied from 20 to 100 A, are characterized by photoluminescence and cathodoluminescence measurements. As a result of these measurements, main emission lines are redshifted with increments of the Al0.5Ga0.5N barrier thickness. The main emission line of photoluminescence for the barrier thickness of 20 A is centered at 3.188 eV. This value is redshifted with respect to the GaN excitonic emission line by an amount of 290 meV. An additional redshift centered at 2.96 eV is observed with the barrier thickness of 100 angstrom. As the excitation power increases, the main emission lines of the photoluminescence are blueshifted significantly and then saturated. This behavior is explained by the partial screening of the piezoelectric field by the photoexcited electron-hole pairs. From the results of cathodoluminescence measurements, the GaN excitonic emission line as well as the quantum well emission line for the barrier thickness of 20 A is also observed. (C) 2005 American Institute of Physics.
Files in This Item
Go to Link
Appears in
Collections
COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Altmetrics

Total Views & Downloads

BROWSE