Low-temperature gate oxynitrides formed by radical oxygen/nitrogen in a low-bias high-density plasma
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, JH | - |
dc.contributor.author | Cho, HJ | - |
dc.contributor.author | Lim, KY | - |
dc.date.accessioned | 2021-06-23T23:39:28Z | - |
dc.date.available | 2021-06-23T23:39:28Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2005-04 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46037 | - |
dc.description.abstract | Low-temperature (<= 400 degrees C) ultrathin (similar to 3 nm) gate oxynitrides have been formed, without the need to post-anneal, by using radical oxygen and nitrogen in a low-biased high-density plasma utilizing a unique slot-plane-antenna technique. X-ray photoelectron and secondary-ion mass spectroscopies reveal that the high nitrogen concentrations confined within the bulk of oxynitrides stem mostly from the bonding configuration of Si - N = O-2. Compared to plasma nitrided thermal oxides, plasma oxynitrides show a better efficiency of nitridation along with the improved charge-to-breakdown and interface characteristics, which allows further scaling down of devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | 한국물리학회 | - |
dc.title | Low-temperature gate oxynitrides formed by radical oxygen/nitrogen in a low-bias high-density plasma | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, JH | - |
dc.identifier.scopusid | 2-s2.0-17744387952 | - |
dc.identifier.wosid | 000228458900047 | - |
dc.identifier.bibliographicCitation | Journal of the Korean Physical Society, v.46, no.4, pp.1007 - 1012 | - |
dc.relation.isPartOf | Journal of the Korean Physical Society | - |
dc.citation.title | Journal of the Korean Physical Society | - |
dc.citation.volume | 46 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1007 | - |
dc.citation.endPage | 1012 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001118756 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | SILICON DIOXIDE | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | NITRIDATION | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordAuthor | gate oxide | - |
dc.subject.keywordAuthor | plasma oxynitridation | - |
dc.subject.keywordAuthor | X-ray photoelectron spectroscopy | - |
dc.identifier.url | https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART001118756 | - |
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