Analysis on Mechanical-Strain Induced Bias-Stress Instabilities for the Flexible InGaZnO Thin Film Transistors with Different Channel Geometries
DC Field | Value | Language |
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dc.contributor.author | Jang, Hye won | - |
dc.contributor.author | Kim, Ki hwan | - |
dc.contributor.author | Oh, Saeroonter | - |
dc.contributor.author | Yoon, Sung min | - |
dc.date.accessioned | 2021-06-22T11:02:08Z | - |
dc.date.available | 2021-06-22T11:02:08Z | - |
dc.date.issued | 2019-07 | - |
dc.identifier.issn | 0000-0000 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/4605 | - |
dc.description.abstract | Channel geometry effects on the gate bias-stress instabilities of the flexible amorphous InGaZnO (IGZO) thin film transistors (TFTs) fabricated on ultra-thin polyimide films with a thickness of 1.2 μm were investigated. The flexible IGZO TFT exhibited a saturation mobility of 13.2 cm2/Vs and a subthreshold swing of 0.19 V/dec. Excellent positive bias stress (PBS) stabilities could be successfully obtained at a gate bias of 20 V even under the mechanically-strained conditions. Alternatively, at a higher bias stress of 35 V, the turn-on voltage shifts at a bending radius of 1 mm during the PBS tests were estimated for the TFTs with channel widths of 20 μm and 160 μm to be 0.7 and 4.9 V, respectively. Channel geometry-dependent PBS instability was suggested to originate from the stress concentration along the bending axis, which was verified by the evaluation results measured at various conditions and the TCAD simulations. © 2019 FTFMD. | - |
dc.format.extent | 4 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Analysis on Mechanical-Strain Induced Bias-Stress Instabilities for the Flexible InGaZnO Thin Film Transistors with Different Channel Geometries | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.23919/AM-FPD.2019.8830599 | - |
dc.identifier.scopusid | 2-s2.0-85073230530 | - |
dc.identifier.wosid | 000589508400041 | - |
dc.identifier.bibliographicCitation | AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, pp 1 - 4 | - |
dc.citation.title | AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.docType | Conference Paper | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Computer Science | - |
dc.relation.journalWebOfScienceCategory | Computer Science, Hardware & Architecture | - |
dc.subject.keywordPlus | Bending tests | - |
dc.subject.keywordPlus | Film thickness | - |
dc.subject.keywordPlus | Flat panel displays | - |
dc.subject.keywordPlus | Gallium compounds | - |
dc.subject.keywordPlus | Geometry | - |
dc.subject.keywordPlus | Semiconducting indium compounds | - |
dc.subject.keywordPlus | Thin film circuits | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Zinc compounds | - |
dc.subject.keywordPlus | Amorphous InGaZnO | - |
dc.subject.keywordPlus | Evaluation results | - |
dc.subject.keywordPlus | Mechanical strain | - |
dc.subject.keywordPlus | Saturation mobility | - |
dc.subject.keywordPlus | Strained condition | - |
dc.subject.keywordPlus | Subthreshold swing | - |
dc.subject.keywordPlus | Thin-film transistor (TFTs) | - |
dc.subject.keywordPlus | Turn-on voltages | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/8830599/ | - |
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