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Line width variation with absorber thickness in extreme ultraviolet lithography

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dc.contributor.authorJeon, Young-Doo J-
dc.contributor.authorChoi, Min-Ki-
dc.contributor.authorKim,Eun-Jin-
dc.contributor.authorKim, Jong-Sun-
dc.contributor.authorOh, Hye-Keun-
dc.date.accessioned2021-06-24T00:09:03Z-
dc.date.available2021-06-24T00:09:03Z-
dc.date.issued2005-05-
dc.identifier.issn1605-7422-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46486-
dc.description.abstractSelectivity of extreme ultra-violet lithography mask's material and thickness significantly influences on pattern formation. Since the reflectance changes periodically depending on absorber thickness, we investigated the absorber thickness effect on to near field and aerial image for 32 nm line/space and isolated pattern. We chose germanium and chromium as absorber materials. We also investigated the line width variation by absorber thickness change with different duty ratios. SOLID-EUV of sigma-C was used for this study.-
dc.format.extent8-
dc.language영어-
dc.language.isoENG-
dc.publisherSPIE-
dc.titleLine width variation with absorber thickness in extreme ultraviolet lithography-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1117/12.600406-
dc.identifier.scopusid2-s2.0-24644458839-
dc.identifier.wosid000229586500069-
dc.identifier.bibliographicCitationProgress in Biomedical Optics and Imaging - Proceedings of SPIE, v.5751, no.II, pp 670 - 677-
dc.citation.titleProgress in Biomedical Optics and Imaging - Proceedings of SPIE-
dc.citation.volume5751-
dc.citation.numberII-
dc.citation.startPage670-
dc.citation.endPage677-
dc.type.docTypeConference Paper-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaOptics-
dc.relation.journalResearchAreaImaging Science & Photographic Technology-
dc.relation.journalWebOfScienceCategoryOptics-
dc.relation.journalWebOfScienceCategoryImaging Science & Photographic Technology-
dc.subject.keywordPlusChromium-
dc.subject.keywordPlusGermanium-
dc.subject.keywordPlusImage analysis-
dc.subject.keywordPlusLight absorption-
dc.subject.keywordPlusMasks-
dc.subject.keywordPlusUltraviolet radiation-
dc.subject.keywordPlusAerial image-
dc.subject.keywordPlusEUV lithography-
dc.subject.keywordPlusMask absorber-
dc.subject.keywordPlusMask thickness-
dc.subject.keywordPlusNear field-
dc.subject.keywordPlusLithography-
dc.subject.keywordAuthorAerial image-
dc.subject.keywordAuthorEUV lithography-
dc.subject.keywordAuthorMask absorber-
dc.subject.keywordAuthorMask thickness-
dc.subject.keywordAuthorNear field-
dc.identifier.urlhttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/5751/1/Line-width-variation-with-absorber-thickness-in-extreme-ultraviolet-lithography/10.1117/12.600406.short-
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF APPLIED PHYSICS > 1. Journal Articles
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