Preparation of TiO2 thin film by liquid sprayed mist CVD method
DC Field | Value | Language |
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dc.contributor.author | Kim, Bok hee | - |
dc.contributor.author | Lee, Jo young | - |
dc.contributor.author | Choa, Yong Ho | - |
dc.contributor.author | Higuchi, M | - |
dc.contributor.author | Mizutani, N | - |
dc.date.accessioned | 2021-06-24T00:40:53Z | - |
dc.date.available | 2021-06-24T00:40:53Z | - |
dc.date.issued | 2004-03 | - |
dc.identifier.issn | 0921-5107 | - |
dc.identifier.issn | 1873-4944 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46609 | - |
dc.description.abstract | Titanium dioxide (TiO2) thin film was synthesized on alpha-Al2O3 (0 0 0 1) substrate by liquid sprayed mist chemical vapor deposition under 1 atm. Tetraethylorthotitanate [TEOT, (C2H5O)(4)Ti] was used as starting material. The liquid source to synthesize TiO2 thin film was prepared from dissolving the starting materials in 2-methoxyethanol. The TiO2 thin film was obtained as the amorphous phase at 300 degreesC and crystalline anatase type TiO2 above 400 degreesC. The crystal of thin film was mainly oriented to (112) plane. The degree of (112) orientation, the thickness, and the surface roughness of the film were strongly dependent on the substrate temperature and deposition time. By the controlling the substrate temperature and deposition time, TiO2/alpha-Al2O3 (0 0 0 1) films with preferred orientation were successfully fabricated, and the film deposition rate was about 10 nm/min. (C) 2004 Elsevier B.V. All rights reserved. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Elsevier BV | - |
dc.title | Preparation of TiO2 thin film by liquid sprayed mist CVD method | - |
dc.type | Article | - |
dc.publisher.location | 네델란드 | - |
dc.identifier.doi | 10.1016/j.mseb.2003.12.010 | - |
dc.identifier.scopusid | 2-s2.0-1542335381 | - |
dc.identifier.wosid | 000220420100011 | - |
dc.identifier.bibliographicCitation | Materials Science & Engineering B: Solid-State Materials for Advanced Technology, v.107, no.3, pp 289 - 294 | - |
dc.citation.title | Materials Science & Engineering B: Solid-State Materials for Advanced Technology | - |
dc.citation.volume | 107 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 289 | - |
dc.citation.endPage | 294 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | PYROLYSIS | - |
dc.subject.keywordPlus | SENSORS | - |
dc.subject.keywordAuthor | synthesis of TiO2 thin film | - |
dc.subject.keywordAuthor | ultrasonic atomizer | - |
dc.subject.keywordAuthor | liquid sprayed mist CVD | - |
dc.subject.keywordAuthor | 1 atmosphere | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0921510704000030?via%3Dihub | - |
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