Aerial image characterization for the defects in the extreme ultraviolet mask
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoo, Myoung-Sul | - |
dc.contributor.author | Park, Seung-Wook | - |
dc.contributor.author | Kim, Jong-Hoi | - |
dc.contributor.author | Kwon, Yeong-Keun | - |
dc.contributor.author | Oh, Hye-Keun | - |
dc.date.accessioned | 2021-06-24T00:41:40Z | - |
dc.date.available | 2021-06-24T00:41:40Z | - |
dc.date.issued | 2004-05 | - |
dc.identifier.issn | 0277-786X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46633 | - |
dc.description.abstract | Simulation has been used to predict the aerial images for masks with defect free multilayer and with defect in multilayer. Mask defects are easily produced in extreme ultraviolet lithography mask fabrication process because 40 Mo/Si multilayer films are stacked and each stack is made from 2 to 4 run. In this case, multilayer can be stacked with defects and with slightly different heights. It is hard to achieve an aerial image which we want to get. This paper discusses various image properties when there are no defects and when there are different kinds of defects on multilayer. The results were calculated by using SOLID-EUV of Simga-C. The aerial images caused by defects on the multilayer are characterized. | - |
dc.format.extent | 9 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.title | Aerial image characterization for the defects in the extreme ultraviolet mask | - |
dc.type | Article | - |
dc.identifier.doi | 10.1117/12.534851 | - |
dc.identifier.scopusid | 2-s2.0-3843099212 | - |
dc.identifier.wosid | 000222554700080 | - |
dc.identifier.bibliographicCitation | Proceedings of SPIE - The International Society for Optical Engineering, v.5374, no.PART 2, pp 751 - 759 | - |
dc.citation.title | Proceedings of SPIE - The International Society for Optical Engineering | - |
dc.citation.volume | 5374 | - |
dc.citation.number | PART 2 | - |
dc.citation.startPage | 751 | - |
dc.citation.endPage | 759 | - |
dc.type.docType | Conference Paper | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Manufacturing | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | Computer simulation | - |
dc.subject.keywordPlus | Electromagnetic wave reflection | - |
dc.subject.keywordPlus | Etching | - |
dc.subject.keywordPlus | Extrusion | - |
dc.subject.keywordPlus | Light absorption | - |
dc.subject.keywordPlus | Multilayers | - |
dc.subject.keywordPlus | Photolithography | - |
dc.subject.keywordPlus | Polishing | - |
dc.subject.keywordPlus | Ultraviolet radiation | - |
dc.subject.keywordPlus | Aerial images | - |
dc.subject.keywordPlus | EUV lithography | - |
dc.subject.keywordPlus | EUV masks | - |
dc.subject.keywordPlus | Extreme ultraviolet (EUV) | - |
dc.subject.keywordPlus | Multilayer defects | - |
dc.subject.keywordPlus | Masks | - |
dc.subject.keywordAuthor | Aerial image | - |
dc.subject.keywordAuthor | EUV lithography | - |
dc.subject.keywordAuthor | EUV mask | - |
dc.subject.keywordAuthor | Multilayer defect | - |
dc.identifier.url | https://www.spiedigitallibrary.org/conference-proceedings-of-spie/5374/1/Aerial-image-characterization-for-the-defects-in-the-extreme-ultraviolet/10.1117/12.534851.short | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.