Microwave performance of recessed gate Al0.2Ga0.8N/GaN HFETs fabricated using a photoelectrochemical etching technique
DC Field | Value | Language |
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dc.contributor.author | Kim, Jong wook | - |
dc.contributor.author | Lee, Jae seung | - |
dc.contributor.author | Lee, Won sang | - |
dc.contributor.author | Shin, Jin ho | - |
dc.contributor.author | Jung, Doo chan | - |
dc.contributor.author | Shin, Moo whan | - |
dc.contributor.author | Kim, Chang seok | - |
dc.contributor.author | Oh, Jae eung | - |
dc.contributor.author | Lee, Jung hee | - |
dc.contributor.author | Hahm, Sung ho | - |
dc.date.accessioned | 2021-06-24T01:02:30Z | - |
dc.date.available | 2021-06-24T01:02:30Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2002-07 | - |
dc.identifier.issn | 0921-5107 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46804 | - |
dc.description.abstract | This is the first report on the fabrication of AlGaN/GaN HFETs which has a recessed gate structure achieved by the photoelectrochemical etching technique. Optimal photoelectrochemical wet etching conditions were stabilized and applied for the device fabrication. The DC and large-signal RF performance of thus fabricated device is presented as well. The ohmic contacts fabricated on the n(+)-GaN layer exhibited contact resistivity of mid 10(-6) Omega cm(2) and resulted in a linear I-V characteristics during an operation of device. The maximum drain-source current density is approximately 174 mA mm(-1) (at V-GS = 1 V), and the transconductance of approximately 68 mS mm(-1) (at V-GS = -1.1 V, V-DS = 6 V). The maximum frequency is measured to be approximately 31 GHz, and an RF power of 84 mW mm(-1) at 1.8 GHz for a 1400-mum wide gate device. (C) 2002 Elsevier Science B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Microwave performance of recessed gate Al0.2Ga0.8N/GaN HFETs fabricated using a photoelectrochemical etching technique | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Oh, Jae eung | - |
dc.identifier.doi | 10.1016/S0921-5107(02)00165-4 | - |
dc.identifier.scopusid | 2-s2.0-0036641427 | - |
dc.identifier.wosid | 000177087100014 | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.95, no.1, pp.73 - 76 | - |
dc.relation.isPartOf | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.citation.title | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.citation.volume | 95 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 73 | - |
dc.citation.endPage | 76 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | HEMTS | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | HFET | - |
dc.subject.keywordAuthor | photoelectrochemical etching | - |
dc.subject.keywordAuthor | maximum frequency | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0921510702001654?via%3Dihub | - |
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