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A long-wavelength infrared photodetector with self-organized InAs quantum dots embedded on HEMT-like structure
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Cho, Tae hee | - |
| dc.contributor.author | Kim, Jong wook | - |
| dc.contributor.author | Oh, Jae Eung | - |
| dc.contributor.author | Choe, Jeong woo | - |
| dc.contributor.author | Hong, songcheol | - |
| dc.date.accessioned | 2021-06-24T01:08:08Z | - |
| dc.date.available | 2021-06-24T01:08:08Z | - |
| dc.date.issued | 1999-04 | - |
| dc.identifier.issn | 0021-4922 | - |
| dc.identifier.issn | 1347-4065 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/47002 | - |
| dc.description.abstract | We fabricated a quantum dot infrared photodetector (QDIP) with 5-stacked self-organized InAs quantum dots embedded in a high electron mobility transistor-like modulation doped structure and utilize lateral electron transport. A peak response of the QDIP appeared at lambda = 10.5 mu m at T = 80 K. We also found that the device exhibits bias-dependent responsivity. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | JAPAN J APPLIED PHYSICS | - |
| dc.title | A long-wavelength infrared photodetector with self-organized InAs quantum dots embedded on HEMT-like structure | - |
| dc.type | Article | - |
| dc.publisher.location | 일본 | - |
| dc.identifier.doi | 10.1143/JJAP.38.2442 | - |
| dc.identifier.scopusid | 2-s2.0-0000711061 | - |
| dc.identifier.wosid | 000082871300057 | - |
| dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.38, no.4B, pp 2442 - 2444 | - |
| dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
| dc.citation.volume | 38 | - |
| dc.citation.number | 4B | - |
| dc.citation.startPage | 2442 | - |
| dc.citation.endPage | 2444 | - |
| dc.type.docType | Article; Proceedings Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | PHOTOCONDUCTIVITY | - |
| dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
| dc.subject.keywordPlus | LAYER | - |
| dc.subject.keywordAuthor | self organized | - |
| dc.subject.keywordAuthor | InAs | - |
| dc.subject.keywordAuthor | quantum dot | - |
| dc.subject.keywordAuthor | infrared | - |
| dc.subject.keywordAuthor | photodetector | - |
| dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.38.2442 | - |
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