A study on the microstructure of Pt/TaN/Si films by high resolution TEM analysis
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Kwang-Nam | - |
dc.contributor.author | Kim, Jong-Wook | - |
dc.contributor.author | Oh, Jae-Eung | - |
dc.contributor.author | Park, Chang-Su | - |
dc.contributor.author | Lee, Sang-In | - |
dc.contributor.author | Lee, Moon-Yong | - |
dc.date.accessioned | 2021-06-24T01:08:42Z | - |
dc.date.available | 2021-06-24T01:08:42Z | - |
dc.date.issued | 1998-11 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.issn | 1976-8524 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/47017 | - |
dc.description.abstract | The microstructure change of Pt/amorphous TaN/Si films after various heat treatments has been investigated by high resolution transmission electron microscopy (HR-TEM) analysis. TaN thin films are deposited by remote plasma metalorganic chemical vapor deposition (RP-MOCVD) using pentakis-dimethyl-amino-tantalum (PDMATa) and radical sources, hydrogen and ammonia plasma. Deposited TaN thin film shows excellent barrier properties such as good resistance against oxidation after post-heat treatment at high temperature. In the case of hydrogen plasma, however, diffusion of Pt into TaN layer was observed, which was caused by the out-diffusion bf carbon through the grain boundaries of Pt. In the case of ammonia plasma, the formation of thin oxide layer at the Pt/TaN interface was observed. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | A study on the microstructure of Pt/TaN/Si films by high resolution TEM analysis | - |
dc.type | Article | - |
dc.publisher.location | 대한민국 | - |
dc.identifier.scopusid | 2-s2.0-0032281049 | - |
dc.identifier.wosid | 000077308900026 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.33, no.supple.2, pp S159 - S161 | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 33 | - |
dc.citation.number | supple.2 | - |
dc.citation.startPage | S159 | - |
dc.citation.endPage | S161 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | METALLIZATIONS | - |
dc.subject.keywordPlus | TA | - |
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