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A simulation study of peak effect in a two-dimensional disordered vortex solid

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dc.contributor.authorCha, MC-
dc.contributor.authorFertig, HA-
dc.date.accessioned2021-06-24T01:09:06Z-
dc.date.available2021-06-24T01:09:06Z-
dc.date.created2021-01-21-
dc.date.issued1997-09-
dc.identifier.issn0374-4884-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/47031-
dc.description.abstractWe study the behavior of threshold depinning force as a function of the shear modulus in a model of two-dimensional logarithmically interacting vortices subject to a random potential using a simulated annealing molecular dynamics method. Peak effects and different nature of depinning flow patterns are observed. This result suggests that peak effect is a signal of cross-over between the different pinning regimes.-
dc.language영어-
dc.language.isoen-
dc.publisherKOREAN PHYSICAL SOC-
dc.titleA simulation study of peak effect in a two-dimensional disordered vortex solid-
dc.typeArticle-
dc.contributor.affiliatedAuthorCha, MC-
dc.identifier.scopusid2-s2.0-0031485947-
dc.identifier.wosidA1997XW76700012-
dc.identifier.bibliographicCitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.31, pp.S302 - S305-
dc.relation.isPartOfJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume31-
dc.citation.startPageS302-
dc.citation.endPageS305-
dc.type.rimsART-
dc.type.docTypeArticle; Proceedings Paper-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.subject.keywordPlusFLUX-LINE-LATTICE-
dc.subject.keywordPlusCHARGE-DENSITY WAVES-
dc.subject.keywordPlusII SUPERCONDUCTORS-
dc.subject.keywordPlusPHASE SLIPS-
dc.subject.keywordPlusYBA2CU3O7-DELTA-
dc.subject.keywordPlusDYNAMICS-
dc.subject.keywordPlusDEFECTS-
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)
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