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THERMALLY STABLE TERNARY TITANIUM-TANTALUM SILICIDE FORMATION ON POLYCRYSTALLINE SILICON
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | CHOI, JS | - |
| dc.contributor.author | PAEK, SH | - |
| dc.contributor.author | HWANG, YS | - |
| dc.contributor.author | KANG, SG | - |
| dc.contributor.author | CHO, HC | - |
| dc.contributor.author | OH, JE | - |
| dc.contributor.author | SHIM, TE | - |
| dc.contributor.author | LEE, SI | - |
| dc.contributor.author | LEE, JK | - |
| dc.contributor.author | LEE, JG | - |
| dc.date.accessioned | 2021-06-24T01:10:09Z | - |
| dc.date.available | 2021-06-24T01:10:09Z | - |
| dc.date.created | 2021-01-21 | - |
| dc.date.issued | 1993-07 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/47076 | - |
| dc.description.abstract | A material for thermally stable self-aligned silicide technologies has been developed using sequentially deposited Ti/Ta on polycrystalline silicon. At lower annealing temperatures below 1000-degrees-C two separate phases were found by cross-sectional transmission electron microscopy to exist in the form of bilayer TiSi2/TaSi2. The formation of a ternary phase (TiTa)Si2 has been observed at a higher temperature of 1000-degrees-C. Consequently, the ternary (TiTa) Si2 layer could be kept extremely flat, with a sheet resistance of 5 OMEGA/square, even after 1000-degrees-C, 30 min annealing. Cross-sectional transmission electron micrographs of the structure clearly reveal that no agglomeration occurs during the heat treatment. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.title | THERMALLY STABLE TERNARY TITANIUM-TANTALUM SILICIDE FORMATION ON POLYCRYSTALLINE SILICON | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | OH, JE | - |
| dc.identifier.doi | 10.1063/1.354861 | - |
| dc.identifier.scopusid | 2-s2.0-0346979554 | - |
| dc.identifier.wosid | A1993LM78200114 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.74, no.2, pp.1456 - 1458 | - |
| dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.volume | 74 | - |
| dc.citation.number | 2 | - |
| dc.citation.startPage | 1456 | - |
| dc.citation.endPage | 1458 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Note | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | STABILITY | - |
| dc.subject.keywordPlus | TISI2 | - |
| dc.subject.keywordPlus | SI | - |
| dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.354861 | - |
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