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Analysis on Mechanical-Strain Induced Bias-Stress Instabilities for the Flexible InGaZnO Thin Film Transistors with Different Channel Geometries
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오새룬터 | - |
| dc.date.accessioned | 2021-06-22T11:04:41Z | - |
| dc.date.available | 2021-06-22T11:04:41Z | - |
| dc.date.issued | 20190705 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/4802 | - |
| dc.title | Analysis on Mechanical-Strain Induced Bias-Stress Instabilities for the Flexible InGaZnO Thin Film Transistors with Different Channel Geometries | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) | - |
| dc.citation.conferencePlace | Kyoto, Japan | - |
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