Surface Passivation and Carrier Collection in {110}, {100} and Circular Si Microwire Solar Cells
- Authors
- Ro, Yun Goo; Chen, Renjie; Liu, Ren; Li, Nan; Williamson, Theodore; Yoo, Jinkyoung; Sim, Sangwan; Prasankumar, Rohit P.; Dayeh, Shadi A.
- Issue Date
- Nov-2018
- Publisher
- Wiley-VCH Verlag
- Keywords
- microwire facet; Si; solar cell; surface passivation; surface recombination
- Citation
- Advanced Energy Materials, v.8, no.33, pp.1 - 11
- Indexed
- SCIE
SCOPUS
- Journal Title
- Advanced Energy Materials
- Volume
- 8
- Number
- 33
- Start Page
- 1
- End Page
- 11
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/5101
- DOI
- 10.1002/aenm.201802154
- ISSN
- 1614-6832
- Abstract
- Surface recombination is a major bottleneck for realizing highly efficient micro/nanostructure solar cells. Here, parametric studies of the influence of Si microwire (SiMW) surface-facet orientation (rectangular with flat-facets, {110}, {100} and circular), with a fixed height of 10 mu m, diameter (D = 1.5-9.5 mu m), and sidewall spacing (S = 2.5-8.5 mu m), and mesh-grid density (1-16 mm(-2)) on recombination and carrier collection in SiMW solar cells with radial p-n junctions are reported. An effective surface passivation layer composed of thin thermally grown silicon dioxide (SiO2) and silicon nitride (SiNx) layers is employed. For a fixed D of 1.5 mu m, tight SiMW spacing results in improved short-circuit current density (J(sc) = 30.1 mA cm(-2)) and sparse arrays result in open-circuit voltages (V-oc = 0.552 V) that are similar to those of control Si planar cells. For a fixed S, smaller D results in better light trapping at shorter wavelengths and higher J(sc) while larger D exhibits better light trapping at larger wavelengths and a higher V-oc. With a mesh-grid electrode the power conversion efficiency increases to 15.3%. These results provide insights on the recombination mechanisms in SiMW solar cells and provide general design principles for optimizing their performance.
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