Comparative Study on Hydrogen Behavior in InGaZnO Thin Film Transistors with a SiO2/SiNx/SiO2 Buffer on Polyimide and Glass Substrates
DC Field | Value | Language |
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dc.contributor.author | Han, Ki-Lim | - |
dc.contributor.author | Cho, Hyeon-Su | - |
dc.contributor.author | Ok, Kyung-Chul | - |
dc.contributor.author | Oh, Saeroonter | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2021-06-22T11:22:16Z | - |
dc.date.available | 2021-06-22T11:22:16Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2018-11 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/5184 | - |
dc.description.abstract | Previous studies have reported on the mechanical robustness and chemical stability of flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on plastic substrates both in flat and curved states. In this study, we investigate how the polyimide (PI) substrate affects hydrogen concentration in the a-IGZO layer, which subsequently influences the device performance and stability under bias-temperature-stress. Hydrogen increases the carrier concentration in the active layer, but it also electrically deactivates intrinsic defects depending on its concentration. The influence of hydrogen varies between the TFTs fabricated on a glass substrate to those on a PI substrate. Hydrogen concentration is 5% lower in devices on a PI substrate after annealing, which increases the hysteresis characteristics from 0.22 to 0.55V and also the threshold voltage shift under positive bias temperature stress by 2xcompared to the devices on a glass substrate. Hence, the analysis and control of hydrogen flux is crucial to maintaining good device performance and stability of a-IGZO TFTs. [GRAPHICS] . | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.title | Comparative Study on Hydrogen Behavior in InGaZnO Thin Film Transistors with a SiO2/SiNx/SiO2 Buffer on Polyimide and Glass Substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Oh, Saeroonter | - |
dc.identifier.doi | 10.1007/s13391-018-0083-5 | - |
dc.identifier.scopusid | 2-s2.0-85052907366 | - |
dc.identifier.wosid | 000443991500011 | - |
dc.identifier.bibliographicCitation | ELECTRONIC MATERIALS LETTERS, v.14, no.6, pp.749 - 754 | - |
dc.relation.isPartOf | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.title | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.volume | 14 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 749 | - |
dc.citation.endPage | 754 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002402512 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | GA-ZN-O | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | DIFFUSION | - |
dc.subject.keywordPlus | DISPLAY | - |
dc.subject.keywordAuthor | InGaZnO | - |
dc.subject.keywordAuthor | Thin film transistor | - |
dc.subject.keywordAuthor | Hydrogen | - |
dc.subject.keywordAuthor | Flexible | - |
dc.subject.keywordAuthor | Polyimide | - |
dc.identifier.url | https://link.springer.com/article/10.1007/s13391-018-0083-5 | - |
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