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A single event upset tolerant latch design

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dc.contributor.authorWang, Haibin-
dc.contributor.authorDai, Xixi-
dc.contributor.authorWang, Yangsheng-
dc.contributor.authorNofal, Issam-
dc.contributor.authorCai, Li-
dc.contributor.authorShen, Zicai-
dc.contributor.authorSun, Wanxiu-
dc.contributor.authorBi, Jinshun-
dc.contributor.authorLi, Bo-
dc.contributor.authorGuo, Gang-
dc.contributor.authorChen, Li-
dc.contributor.authorBaeg, Sang-
dc.date.accessioned2021-06-22T11:41:29Z-
dc.date.available2021-06-22T11:41:29Z-
dc.date.issued2018-09-
dc.identifier.issn0026-2714-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/5661-
dc.description.abstractThis paper presents a single-event-upset tolerant latch design based on a redundant structure featuring four storage nodes (i.e. Quatro). The reference structure manifests single node upset issues when either of the two internal nodes is hit and observes a positive transient afterwards. Two OFF-state transistors are added to those two internal pull-up paths, suppressing positive transient. Simulation and experimental data demonstrate that the proposed design has smaller cross section and higher upset threshold than the reference design.-
dc.format.extent5-
dc.language영어-
dc.language.isoENG-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.titleA single event upset tolerant latch design-
dc.typeArticle-
dc.publisher.location영국-
dc.identifier.doi10.1016/j.microrel.2018.07.019-
dc.identifier.scopusid2-s2.0-85049429603-
dc.identifier.wosid000448227000167-
dc.identifier.bibliographicCitationMICROELECTRONICS RELIABILITY, v.88-90, pp 909 - 913-
dc.citation.titleMICROELECTRONICS RELIABILITY-
dc.citation.volume88-90-
dc.citation.startPage909-
dc.citation.endPage913-
dc.type.docTypeArticle; Proceedings Paper-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusNM CMOS-
dc.subject.keywordPlusERROR-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusMECHANISMS-
dc.subject.keywordPlusSRAMS-
dc.subject.keywordPlusCELL-
dc.subject.keywordAuthorSingle event upset-
dc.subject.keywordAuthorLatch-
dc.subject.keywordAuthorDICE-
dc.subject.keywordAuthorCharge sharing-
dc.subject.keywordAuthorRadiation effects-
dc.identifier.urlhttps://www.sciencedirect.com/science/article/pii/S0026271418305614?via%3Dihub-
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ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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