A single event upset tolerant latch design
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, Haibin | - |
dc.contributor.author | Dai, Xixi | - |
dc.contributor.author | Wang, Yangsheng | - |
dc.contributor.author | Nofal, Issam | - |
dc.contributor.author | Cai, Li | - |
dc.contributor.author | Shen, Zicai | - |
dc.contributor.author | Sun, Wanxiu | - |
dc.contributor.author | Bi, Jinshun | - |
dc.contributor.author | Li, Bo | - |
dc.contributor.author | Guo, Gang | - |
dc.contributor.author | Chen, Li | - |
dc.contributor.author | Baeg, Sang | - |
dc.date.accessioned | 2021-06-22T11:41:29Z | - |
dc.date.available | 2021-06-22T11:41:29Z | - |
dc.date.issued | 2018-09 | - |
dc.identifier.issn | 0026-2714 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/5661 | - |
dc.description.abstract | This paper presents a single-event-upset tolerant latch design based on a redundant structure featuring four storage nodes (i.e. Quatro). The reference structure manifests single node upset issues when either of the two internal nodes is hit and observes a positive transient afterwards. Two OFF-state transistors are added to those two internal pull-up paths, suppressing positive transient. Simulation and experimental data demonstrate that the proposed design has smaller cross section and higher upset threshold than the reference design. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | A single event upset tolerant latch design | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1016/j.microrel.2018.07.019 | - |
dc.identifier.scopusid | 2-s2.0-85049429603 | - |
dc.identifier.wosid | 000448227000167 | - |
dc.identifier.bibliographicCitation | MICROELECTRONICS RELIABILITY, v.88-90, pp 909 - 913 | - |
dc.citation.title | MICROELECTRONICS RELIABILITY | - |
dc.citation.volume | 88-90 | - |
dc.citation.startPage | 909 | - |
dc.citation.endPage | 913 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NM CMOS | - |
dc.subject.keywordPlus | ERROR | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.subject.keywordPlus | SRAMS | - |
dc.subject.keywordPlus | CELL | - |
dc.subject.keywordAuthor | Single event upset | - |
dc.subject.keywordAuthor | Latch | - |
dc.subject.keywordAuthor | DICE | - |
dc.subject.keywordAuthor | Charge sharing | - |
dc.subject.keywordAuthor | Radiation effects | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0026271418305614?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.