Failure signature analysis of power-opens in DDR3 SDRAMs
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Li, Tan | - |
dc.contributor.author | Lee, Hosung | - |
dc.contributor.author | Bak, Geunyong | - |
dc.contributor.author | Baeg, Sanghyeon | - |
dc.date.accessioned | 2021-06-22T11:41:29Z | - |
dc.date.available | 2021-06-22T11:41:29Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2018-09 | - |
dc.identifier.issn | 0026-2714 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/5662 | - |
dc.description.abstract | Open defects in power pins can only be diagnosed indirectly, and these diagnoses are a challenging task in failure analysis due to the failure signature's aliasing to other issues. Open defects cannot be detected by traditional DC type test methods and can remain a potential risk in stressful device operation. In this work, error signatures in power open faults are experimentally probed to better understand electrical signatures induced by power-open. The power open faults are intentionally injected into a DDR3 SDRAM test platform. The power network inside the DDR3 SDRAM is experimentally found to be asymmetrical. Power-open defects in one power pin produce a range of power noise (0-65 mV), depending on the location of the power pin. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Failure signature analysis of power-opens in DDR3 SDRAMs | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Baeg, Sanghyeon | - |
dc.identifier.doi | 10.1016/j.microrel.2018.06.104 | - |
dc.identifier.scopusid | 2-s2.0-85049346145 | - |
dc.identifier.wosid | 000448227000053 | - |
dc.identifier.bibliographicCitation | MICROELECTRONICS RELIABILITY, v.88-90, pp.277 - 281 | - |
dc.relation.isPartOf | MICROELECTRONICS RELIABILITY | - |
dc.citation.title | MICROELECTRONICS RELIABILITY | - |
dc.citation.volume | 88-90 | - |
dc.citation.startPage | 277 | - |
dc.citation.endPage | 281 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Power pin | - |
dc.subject.keywordAuthor | Open defect | - |
dc.subject.keywordAuthor | Power integrity | - |
dc.subject.keywordAuthor | VDD bounce | - |
dc.subject.keywordAuthor | Power distribution | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0026271418305250?via%3Dihub | - |
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