High-performance and scalable metal-chalcogenide semiconductors and devices via chalco-gel routesopen access
- Authors
- Kwon, Sung Min; Won, Jong Kook; Jo, Jeong-Wan; Kim, Jaehyun; Kim, Hee-Joong; Kwon, Hyuck-In; Kim, Jaekyun; Ahn, Sangdoo; Kim, Yong-Hoon; Lee, Myoung-Jae; Lee, Hyung-ik; Marks, Tobin J.; Kim, Myung-Gil; Park, Sung Kyu
- Issue Date
- Apr-2018
- Publisher
- American Association for the Advancement of Science
- Keywords
- THIN-FILM TRANSISTORS; SINGLE-LAYER MOS2; OPTICAL-PROPERTIES; INTEGRATED-CIRCUITS; CDSE NANOCRYSTALS; CADMIUM-SULFIDE; BAND-GAP; OXIDE; ELECTRONICS; GRAPHENE
- Citation
- Science Advances, v.4, no.4, pp 1 - 10
- Pages
- 10
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Science Advances
- Volume
- 4
- Number
- 4
- Start Page
- 1
- End Page
- 10
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/6370
- DOI
- 10.1126/sciadv.aap9104
- ISSN
- 2375-2548
2375-2548
- Abstract
- We report a general strategy for obtaining high-quality, large-areametal-chalcogenide semiconductor films from precursors combining chelated metal salts with chalcoureas or chalcoamides. Using conventional organic solvents, such precursors enable the expeditious formation of chalco-gels, which are easily transformed into the corresponding high-performance metal-chalcogenide thin films with large, uniform areas. Diverse metal chalcogenides and their alloys (MQ(x): M = Zn, Cd, In, Sb, Pb; Q = S, Se, Te) are successfully synthesized at relatively low processing temperatures (<400 degrees C). The versatility of this scalable route is demonstrated by the fabrication of large-area thin-film transistors (TFTs), optoelectronic devices, and integrated circuits on a 4-inch Si wafer and 2.5-inch borosilicate glass substrates in ambient air using CdS, CdSe, and In2Se3 active layers. The CdSe TFTs exhibit a maximum field-effect mobility greater than 300 cm(2) V-1 s(-1) with an on/off current ratio of >10(7) and good operational stability (threshold voltage shift < 0.5 V at a positive gate bias stress of 10 ks). In addition, metal chalcogenide-based phototransistors with a photodetectivity of > 10(13) Jones and seven-stage ring oscillators operating at a speed of similar to 2.6 MHz (propagation delay of < 27 ns per stage) are demonstrated.
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