Investigation of electrical performance and operation stability of RF-sputtered InSnZnO thin film transistors by oxygen-ambient rapid thermal annealing
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Maeng, Seohyun | - |
dc.contributor.author | Kim, Hyunjin | - |
dc.contributor.author | Choi, Gisang | - |
dc.contributor.author | Choi, Youngjoon | - |
dc.contributor.author | Oh, Saeroonter | - |
dc.contributor.author | Kim, Jaekyun | - |
dc.date.accessioned | 2021-06-22T04:44:58Z | - |
dc.date.available | 2021-06-22T04:44:58Z | - |
dc.date.issued | 2020-12 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.issn | 1361-6641 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/736 | - |
dc.description.abstract | We investigated the electrical properties and operational stability of amorphous indium-tin-zinc-oxide (a-ITZO) thin-film transistors (TFTs). We fabricated the a-ITZO TFTs using deposition by radio frequency sputtering at room temperature followed by a rapid thermal annealing (RTA) process at different temperatures and oxygen pressure (P-O2). This is a more practical annealing route compared to a conventional furnace. Based on film densification and oxygen vacancy optimization, the a-ITZO TFTs exhibited 9.8 cm(2) Vs(-1), 0.82 V/decade and 1.39 V, for saturation mobility, sub-threshold swing and threshold voltage, respectively. Operation stability tests and hysteresis behavior of a-ITZO TFTs suggest that oxygen vacancy concentration of a-ITZO thin films gradually decreases under higher P-O2, consequently affecting the threshold voltage and the shift seen after a gate bias stress test. This observation suggests that gate bias stress and hysteresis stability of an a-ITZO device is due to the effect of oxygen-controlled pressure in the RTA process. This a-ITZO TFTs electrical characterization qualitatively coincides with x-ray photoelectron spectroscopic analyses of oxygen vacancy concentration in a-ITZO thin films. Thus, our systematic a-ITZO thin film optimization using the oxygen-ambient RTA process is a practical basis for high-performance amorphous oxide semiconductor TFT post-annealing methods. | - |
dc.format.extent | 10 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Investigation of electrical performance and operation stability of RF-sputtered InSnZnO thin film transistors by oxygen-ambient rapid thermal annealing | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1088/1361-6641/abbc8f | - |
dc.identifier.scopusid | 2-s2.0-85095968574 | - |
dc.identifier.wosid | 000582821700001 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.12, pp 1 - 10 | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 35 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 10 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | TFT | - |
dc.subject.keywordAuthor | sputter process | - |
dc.subject.keywordAuthor | indium-tin-zinc-oxide | - |
dc.subject.keywordAuthor | oxygen vacancy | - |
dc.subject.keywordAuthor | oxygen control | - |
dc.subject.keywordAuthor | rapid thermal annealing | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/1361-6641/abbc8f | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.