Hydrogen passivation: a proficient strategy to enhance the optical and photoelectrochemical performance of InGaN/GaN single-quantum-well nanorods
DC Field | Value | Language |
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dc.contributor.author | Reddeppa, Maddaka | - |
dc.contributor.author | Park, Byung-Guon | - |
dc.contributor.author | Majumder, Sutripto | - |
dc.contributor.author | Kim, Young Heon | - |
dc.contributor.author | Oh, Jae-Eung | - |
dc.contributor.author | Kim, Song-Gang | - |
dc.contributor.author | Kim, Dojin | - |
dc.contributor.author | Kim, Moon-Deock | - |
dc.date.accessioned | 2021-06-22T04:45:07Z | - |
dc.date.available | 2021-06-22T04:45:07Z | - |
dc.date.issued | 2020-11 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.issn | 1361-6528 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/753 | - |
dc.description.abstract | Recently, III-nitride semiconductor nanostructures, especially InGaN/GaN quantum well nanorods (NRs), have been established as a promising material of choice for nanoscale optoelectronics and photoelectrochemical (PEC) water-splitting applications. Due to the large number of surface states, III-nitride NRs suffer from low quantum efficiency. Therefore, control of the surface states is necessary to improve device performance in real-time applications. In this work, we investigated the effect of hydrogen plasma treatment on the optical properties of InGaN/GaN single-quantum-well (SQW) NRs. The low-temperature photoluminescence (PL) studies revealed that yellow and green emissions overlapped and the yellow band is more dominant in the pristine InGaN/GaN SQW NRs. However, the emission corresponding to yellow luminescence was strongly suppressed and the green emission is more intensified in hydrogenated InGaN/GaN SQW NRs. Furthermore, the time-resolved PL spectroscopy studies revealed that the carrier lifetimes of hydrogenated InGaN/GaN SQW NRs are relatively short compared to the pristine InGaN/GaN SQW, indicating the effective reduction of non-radiative centers. From the PEC measurement, the photocurrent density of hydrogenated InGaN/GaN SQW NRs in the H(2)SO(4)solution is found to be 5 mA cm(-2)at -0.48 V versus reversible hydrogen electrode, which is 3.5-fold larger than that of pristine ones. These findings shed new light on the significance of surface treatment on the optical properties and thus nanostructured photoelectrodes for PEC applications. | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Hydrogen passivation: a proficient strategy to enhance the optical and photoelectrochemical performance of InGaN/GaN single-quantum-well nanorods | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1088/1361-6528/aba301 | - |
dc.identifier.scopusid | 2-s2.0-85091691885 | - |
dc.identifier.wosid | 000570312000001 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.31, no.47 | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 31 | - |
dc.citation.number | 47 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | SURFACE PASSIVATION | - |
dc.subject.keywordPlus | GAN NANORODS | - |
dc.subject.keywordPlus | DEEP LEVELS | - |
dc.subject.keywordPlus | NANOWIRE ARRAYS | - |
dc.subject.keywordPlus | WATER | - |
dc.subject.keywordPlus | IMPROVEMENT | - |
dc.subject.keywordPlus | PHOTOANODE | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | BEHAVIOR | - |
dc.subject.keywordAuthor | InGaN | - |
dc.subject.keywordAuthor | GaN SQW NRs | - |
dc.subject.keywordAuthor | optical properties | - |
dc.subject.keywordAuthor | photoelectrochemical properties | - |
dc.subject.keywordAuthor | defect passivation | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/1361-6528/aba301 | - |
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