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A study on degradation mechanism of flexible a-InGaZnO thin film transistor under repetitive bending stress using simulation
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Han, Ki lim | - |
| dc.contributor.author | Jeong, Hyun Jun | - |
| dc.contributor.author | Kim, Beom su | - |
| dc.contributor.author | Oh, Saeroonter | - |
| dc.contributor.author | Park, Jin seong | - |
| dc.date.accessioned | 2021-06-22T13:02:37Z | - |
| dc.date.available | 2021-06-22T13:02:37Z | - |
| dc.date.issued | 2018-12 | - |
| dc.identifier.issn | 1883-2490 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/7921 | - |
| dc.description.abstract | We examined the degradation mechanism of the oxide TFT under repetitive bending stress. As the bending cycle accumulated, the transfer characteristics of the TFTs are degraded. We tried to interpret the cause of degradation by mapping the stress distribution under bending situation using simulation program. © 2018 International Display Workshops. All rights reserved. | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | International Display Workshops | - |
| dc.title | A study on degradation mechanism of flexible a-InGaZnO thin film transistor under repetitive bending stress using simulation | - |
| dc.type | Article | - |
| dc.publisher.location | 대한민국 | - |
| dc.identifier.scopusid | 2-s2.0-85072101061 | - |
| dc.identifier.bibliographicCitation | Proceedings of the International Display Workshops, IDW 2018, v.1, pp 330 - 333 | - |
| dc.citation.title | Proceedings of the International Display Workshops, IDW 2018 | - |
| dc.citation.volume | 1 | - |
| dc.citation.startPage | 330 | - |
| dc.citation.endPage | 333 | - |
| dc.type.docType | Conference Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Degradation | - |
| dc.subject.keywordPlus | Thin film circuits | - |
| dc.subject.keywordPlus | Bending cycles | - |
| dc.subject.keywordPlus | Bending stress | - |
| dc.subject.keywordPlus | Degradation mechanism | - |
| dc.subject.keywordPlus | Flexible device | - |
| dc.subject.keywordPlus | InGaZnO | - |
| dc.subject.keywordPlus | Oxide tft | - |
| dc.subject.keywordPlus | Simulation program | - |
| dc.subject.keywordPlus | Transfer characteristics | - |
| dc.subject.keywordPlus | Thin film transistors | - |
| dc.subject.keywordAuthor | Bending stress | - |
| dc.subject.keywordAuthor | Flexible device | - |
| dc.subject.keywordAuthor | Oxide TFT | - |
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