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Study of TID effects on one row hammering using gamma in DDR4 SDRAMs
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yun, Donghyuk | - |
| dc.contributor.author | Park, Myungsang | - |
| dc.contributor.author | Lim, Chulseung | - |
| dc.contributor.author | Baeg, Sanghyeon | - |
| dc.date.accessioned | 2021-06-22T13:02:56Z | - |
| dc.date.available | 2021-06-22T13:02:56Z | - |
| dc.date.issued | 2018-03 | - |
| dc.identifier.issn | 1541-7026 | - |
| dc.identifier.issn | 1938-1891 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/7942 | - |
| dc.description.abstract | This paper investigates the Total Ionizing Dose (TID) effect on DDR4 SDRAM, using 60Co γ-rays. Although retention time degraded with 830 Gy(Si) exposure, no retention errors were observed at the retention time of 64-ms and temperature of 80 °C. Unlike retention time degradation, the significant degradation in one-row hammering threshold was observed. The threshold was reduced by up to 113 k with tRP 53.75 ns-67% reduction from pre-irradiation values. © 2018 IEEE. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | Study of TID effects on one row hammering using gamma in DDR4 SDRAMs | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1109/IRPS.2018.8353690 | - |
| dc.identifier.scopusid | 2-s2.0-85046973477 | - |
| dc.identifier.wosid | 000468959600151 | - |
| dc.identifier.bibliographicCitation | IEEE International Reliability Physics Symposium Proceedings, v.2018, pp PSE.21 - PSE.25 | - |
| dc.citation.title | IEEE International Reliability Physics Symposium Proceedings | - |
| dc.citation.volume | 2018 | - |
| dc.citation.startPage | PSE.21 | - |
| dc.citation.endPage | PSE.25 | - |
| dc.type.docType | Conference Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | Reliability | - |
| dc.subject.keywordPlus | DDR4 SDRAM | - |
| dc.subject.keywordPlus | one row hammering | - |
| dc.subject.keywordPlus | Preirradiation | - |
| dc.subject.keywordPlus | Retention time | - |
| dc.subject.keywordPlus | Total Ionizing Dose | - |
| dc.subject.keywordPlus | Total ionizing dose effects | - |
| dc.subject.keywordPlus | Gamma rays | - |
| dc.subject.keywordAuthor | DDR4 SDRAM | - |
| dc.subject.keywordAuthor | one row hammering | - |
| dc.subject.keywordAuthor | retention time | - |
| dc.subject.keywordAuthor | total ionizing dose (TID) | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/8353690 | - |
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Related Researcher
- Baeg, Sanghyeon
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)