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Strain effectiveness of gate-all-around Si transistors with various surface orientations and cross-sections
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오새룬터 | - |
| dc.date.accessioned | 2021-06-22T13:07:07Z | - |
| dc.date.available | 2021-06-22T13:07:07Z | - |
| dc.date.issued | 20180207 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/8173 | - |
| dc.title | Strain effectiveness of gate-all-around Si transistors with various surface orientations and cross-sections | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 제25회 한국반도체학술대회 | - |
| dc.citation.conferencePlace | 강원도 정선군 하이원리조트 컨벤션 호텔 | - |
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