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Characterizing the Capacitive Crosstalk in SRAM Cells Using Negative Bit-Line Voltage Stress
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Bae, Jongsun;
Baeg, Sanghyeon
; Park, Sungju
Article
Issue Date
2012
Citation
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, v.61, no.12, pp.3259 - 3272
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
1
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Author
Bae, Jongsun
1
Park, Sung ju
1
Subject
Bit line
1
capacitive defect
1
cell coupling capacitor (C-CCP)
1
CIRCUITS
1
crosstalk
1
DESIGN
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memory
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MODEL
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MOS
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negative voltage stress (NVS)
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2012
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