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Quantification of Substrate Current Caused by an Individual Trap at Different Locations and Energies, Prevailing on Si/SiO2 Interface or Si Substrate of n-MOSFETs
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Shahzadi, Nosheen;
Baeg, Sanghyeon
Article
Issue Date
2022
Citation
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.22, no.4, pp 234 - 243
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대한전자공학회
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Baeg, Sanghyeon
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Shahzadi, Nosheen
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CAPTURE CROSS-SECTIONS
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CHARGE
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low time
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MOSFET
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OXIDE
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shallow and deep level traps
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Si/SiO2 interface
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TCAD simulations
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2022
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scie
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scopus
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