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SCIESCOPUS

A study of the red-shift of a neutral donor bound exciton in GaN nanorods by hydrogenation Go to Link

Park, Byung-Guon; Lee, Sang-Tae; Reddeppa, Maddaka; Kim, Moon-Deock; Oh, Jae-Eung; Lee, Sang-Kwon

ArticleIssue Date2017CitationNANOTECHNOLOGY, v.28, no.36PublisherIOP PUBLISHING LTD

SCIESCOPUS

Temperature-dependent electrical properties of (Pt/Au)/Ga-polarity GaN/Si(111) Schottky diode Go to Link

Peta, Koteswara Rao; Park, Byung-Guon; Lee, Sang-Tae; Kim, Moon-Deock; Oh, Jae-Eung

ArticleIssue Date2012CitationMICROELECTRONIC ENGINEERING, v.93, pp.100 - 104PublisherELSEVIER SCIENCE BV

SCIESCOPUSKCI

Improved Schottky behavior of GaN nanorods using hydrogen plasma treatment Go to Link

Reddeppa, Maddaka; Park, Byung-Guon; Lee, Sang Tae; Nguyen Hoang Hai; Kim, Moon-Deock; Oh, Jae-Eung

ArticleIssue Date2017CitationCURRENT APPLIED PHYSICS, v.17, no.2, pp.192 - 196PublisherELSEVIER

SCIESCOPUS

Fe-doped semi-insulating GaN with solid Fe source grown on (110) Si substrates by NH3 molecular beam epitaxy Go to Link

Noh, Young Kyun; Lee, Sang Tae; Kim, Moon Deock; Oh, Jae Eung

ArticleIssue Date2017CitationJOURNAL OF CRYSTAL GROWTH, v.460, pp.37 - 41PublisherELSEVIER SCIENCE BV

SCIESCOPUS

Reduction of internal polarization fields in InGaN quantum wells by InGaN/AlGaN ultra-thin superlattice barriers with different indium (vol 110, 123108, 2011)Go to Link

Noh, Young-Kyun; Kim, Moon-Deock; Oh, Jae-Eung

ArticleIssue Date2012CitationJOURNAL OF APPLIED PHYSICS, v.111, no.3PublisherAMER INST PHYSICS

SCIESCOPUSKCI

Control of polarity and defects in the growth of AlN films on Si (111) surfaces by inserting an Al interlayer Go to Link

Lee, Sang-Tae; Park, Byung-Guon; Kim, Moon-Deock; Oh, Jae-Eung; Kim, Song-Gang; Kim, Young-Heon; Yang, Woo-Chul

ArticleIssue Date2012CitationCURRENT APPLIED PHYSICS, v.12, no.2, pp.385 - 388PublisherELSEVIER SCIENCE BV

SCIESCOPUS

A load-displacement prediction for a bended slotted disc using the energy method Go to Link

Fawazi, Noor; Lee, Jung-Youn; Oh, Jae-Eung

ArticleIssue Date2012CitationPROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART C-JOURNAL OF MECHANICAL ENGINEERING SCIENCE, v.226, no.C8, pp.2126 - 2137PublisherSAGE PUBLICATIONS LTD

SCIESCOPUS

Normally-Off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3 MBE Go to Link

Han, Sang-Woo; Noh, Youngkyun; Jo, Min-Gi; Kim, Seung-Hwan; Oh, Jae-Eung; Seo, Kwang-Seok; Cha, Ho-Young

ArticleIssue Date2016CitationIEEE ELECTRON DEVICE LETTERS, v.37, no.12, pp.1613 - 1616PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

SCIESCOPUS

Observation of V-shaped defects in the growth of In0.8Al0.2Sb/InSb layers: Temperature and V/III flux ratio dependences Go to Link

Kim, Y. H.; Lee, J. Y.; Noh, Y. G.; Kim, M. D.; Kwon, Y. J.; Oh, J. E.

ArticleIssue Date2006CitationJOURNAL OF CRYSTAL GROWTH, v.296, no.1, pp.75 - 80PublisherELSEVIER

SCIESCOPUS

Growth mechanisms and structural properties of self-assembled AlSb quantum dots on a Si(100) substrate Go to Link

Noh, Y. K.; Park, S. R.; Kim, M. D.; Kwon, Y. J.; Oh, J. E.; Kim, Y. H.; Lee, J. Y.; Kim, S. G.; Chung, K. S.; Kim, T. G.

ArticleIssue Date2007CitationJOURNAL OF CRYSTAL GROWTH, v.301, pp.244 - 247PublisherELSEVIER SCIENCE BV

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