Static and Dynamic Water Motion-Induced Instability in Oxide Thin-Film Transistors and Its Suppression by Using Low-k Fluoropolymer Passivation
- Authors
- Choi, Seungbeom; Jo, Jeong-Wan; Kim, Jaeyoung; Song, Seungho; Kim, Jaekyun; Park, Sung Kyu; Kim, Yong-Hoon
- Issue Date
- Aug-2017
- Publisher
- American Chemical Society
- Keywords
- liquid-contact-electrification; thin-film transistors; fluoropolymer passivation; water stability; indium-gallium-zinc oxide; solution process
- Citation
- ACS Applied Materials and Interfaces, v.9, no.31, pp.26161 - 26168
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS Applied Materials and Interfaces
- Volume
- 9
- Number
- 31
- Start Page
- 26161
- End Page
- 26168
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/9078
- DOI
- 10.1021/acsami.7b05948
- ISSN
- 1944-8244
- Abstract
- Here, we report static and dynamic water motion-induced instability in indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) and its effective suppression with the use of a simple, solution-processed low-k (epsilon similar to 1.9) fluoroplastic resin (FPR) passivation layer. The liquid-contact electrification effect, in which an undesirable drain current modulation is induced by a dynamic motion of a charged liquid such as water, can cause a significant instability in IGZO TFTs. It was found that by adopting a thin (similar to 44 nm) FPR passivation layer for IGZO TFTs, the current modulation induced by the water-contact electrification was greatly reduced in both off- and on-states of the device. In addition, the FPR-passivated IGZO TFTs exhibited an excellent stability to static water exposure (a threshold voltage shift of +0.8 V upon 3600 s of water soaking), which is attributed to the hydrophobicity of the FPR passivation layer. Here, we discuss the origin of the current instability caused by the liquid-contact electrification as well as various static and dynamic stability tests for IGZO TFTs. On the basis of our findings, we believe that the use of a thin, solution-processed FPR passivation layer is effective in suppressing the static and dynamic water motion-induced instabilities, which may enable the realization of high-performance and environment-stable oxide TFTs for emerging wearable and skin-like electronics.
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