Effect of hydrogen on the device performance and stability characteristics of amorphous InGaZnO thin-film transistors with a SiO2/SiNx/SiO2 buffer

Abstract

We investigate the influence of the multi-layered buffer consisting of SiO2/SiNx/SiO2 on amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The multi-layered buffer inhibits permeation of water from flexible plastic substrates and prevents degradation of overlying organic layers. The a-IGZO TFTs with a multi-layered buffer suffer less positive bias temperature stress instability compared to the device with a single SiO2 buffer layer after annealing at 250 degrees C. Hydrogen from the SiNx layer diffuses into the active layer and reduces electron trapping at loosely bound oxygen defects near the SiO2/a-IGZO interface. Quantitative analysis shows that a hydrogen density of 1.85 x 10(21) cm(-3) is beneficial to reliability. However, the multi-layered buffer device annealed at 350 degrees C resulted in conductive characteristics due to the excess carrier concentration from the higher hydrogen density of 2.12 x 10(21) cm(-3). Published by AIP Publishing.