Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Experimental Decomposition of the Positive Gate-bias Temperature Stress-induced Instability and Its Modeling in InGaZnO Thin-film Transistors
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오새룬터 | - |
| dc.date.accessioned | 2021-06-22T13:48:38Z | - |
| dc.date.available | 2021-06-22T13:48:38Z | - |
| dc.date.issued | 20170830 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/9373 | - |
| dc.title | Experimental Decomposition of the Positive Gate-bias Temperature Stress-induced Instability and Its Modeling in InGaZnO Thin-film Transistors | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | International Meeting on Information Display (IMID) | - |
| dc.citation.conferencePlace | BEXCO, Busan, Korea | - |
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.