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A Quatro-Based 65-nm Flip-Flop Circuit for Soft-Error Resilience
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Li, Y. -Q. | - |
| dc.contributor.author | Wang, H. -B. | - |
| dc.contributor.author | Liu, R. | - |
| dc.contributor.author | Chen, L. | - |
| dc.contributor.author | Nofal, I. | - |
| dc.contributor.author | Shi, S. -T. | - |
| dc.contributor.author | He, A. -L | - |
| dc.contributor.author | Guo, G. | - |
| dc.contributor.author | Baeg, S. H. | - |
| dc.contributor.author | Wen, S. -J. | - |
| dc.contributor.author | Wong, R. | - |
| dc.contributor.author | Chen, M. | - |
| dc.contributor.author | Wu, Q. | - |
| dc.date.accessioned | 2021-06-22T14:03:34Z | - |
| dc.date.available | 2021-06-22T14:03:34Z | - |
| dc.date.issued | 2017-06 | - |
| dc.identifier.issn | 0018-9499 | - |
| dc.identifier.issn | 1558-1578 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/9585 | - |
| dc.description.abstract | A flip-flop circuit hardened against soft errors is presented in this paper. This design is an improved version of Quatro for further enhanced soft-error resilience by integrating the guard-gate technique. The proposed design, as well as reference Quatro and regular flip-flops, was implemented and manufactured in a 65-nm CMOS bulk technology. Experimental characterization results of their alpha and heavy ions soft-error rates verified the superior hardening performance of the proposed design over the other two circuits. | - |
| dc.format.extent | 8 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | A Quatro-Based 65-nm Flip-Flop Circuit for Soft-Error Resilience | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1109/TNS.2017.2704062 | - |
| dc.identifier.scopusid | 2-s2.0-85022220521 | - |
| dc.identifier.wosid | 000404974000007 | - |
| dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.64, no.6, pp 1554 - 1561 | - |
| dc.citation.title | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - |
| dc.citation.volume | 64 | - |
| dc.citation.number | 6 | - |
| dc.citation.startPage | 1554 | - |
| dc.citation.endPage | 1561 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Nuclear Science & Technology | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Nuclear Science & Technology | - |
| dc.subject.keywordPlus | 65 NM CMOS | - |
| dc.subject.keywordPlus | SINGLE EVENT UPSETS | - |
| dc.subject.keywordPlus | DESIGN | - |
| dc.subject.keywordPlus | TECHNOLOGY | - |
| dc.subject.keywordPlus | TOLERANT | - |
| dc.subject.keywordPlus | LATCH | - |
| dc.subject.keywordPlus | SEU | - |
| dc.subject.keywordPlus | PERFORMANCE | - |
| dc.subject.keywordPlus | DEPENDENCE | - |
| dc.subject.keywordPlus | SRAMS | - |
| dc.subject.keywordAuthor | Flip-Flop | - |
| dc.subject.keywordAuthor | Quatro | - |
| dc.subject.keywordAuthor | radiation hardness by design (RHBD) | - |
| dc.subject.keywordAuthor | soft error | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/7927472 | - |
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Related Researcher
- Baeg, Sanghyeon
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)